Related papers: Thickness-Dependent Interfacial Coulomb Scattering…
Different scattering mechanisms in graphene are explored and conductivity is calculated within the Boltzmann transport theory. We provide results for short-range scattering using the Random Phase Approximation for electron screening, as…
Coherent electron transport through a quantum channel in the presence of a general extended scattering potential is investigated using a T-matrix Lippmann-Schwinger approach. The formalism is applied to a quantum wire with Gaussian type…
A seemingly anomalous enhancement of electron mobility in strained silicon inversion layers at high sheet densities has exposed a conspicuous gap between device physics theory and experiment in recent years. We show that the root of this…
The in-plane electron mobility has been calculated in InAs/GaSb type-II superlattices at low temperatures. The interface roughness scattering and ionized impurity scattering are investigated as the dominant scattering mechanisms in limiting…
The charge-carrier transport properties of ultrathin metallic films are analysed with ab-initio methods using the density functional theory (DFT) on free-standing single crystalline slabs in the thickness range between 1 and 8 monolayers…
Intrabeam scattering refers to the effects of the Coulomb interaction acting between pairs of charged particles within a bunch in an accelerator. One of the main consequences of intrabeam scattering is a change in the emittances of a bunch:…
The microscopic nature of an insulating state in the vicinity of a superconducting state, in the presence of disorder, is a hotly debated question. While the simplest scenario proposes that Coulomb interactions destroy the Cooper pairs at…
Molybdenum disulfide (MoS2) is a layered semiconductor which has become very important recently as an emerging electronic device material. Being an intrinsic semiconductor the two-dimensional MoS2 has major advantages as the channel…
The electron-phonon interaction and related transport properties are investigated in monolayer silicene and MoS2 by using a density functional theory calculation combined with a full-band Monte Carlo analysis. In the case of silicene, the…
In order to provide the best possible performance, modern infrared photodetector designs necessitate extremely precise modeling of the superlattice absorber region. We advance the Rode's method for the Boltzmann transport equation in…
Recent experiments performed on weakly pinched quantum point contacts, have shown a resistance that tend to decrease at low source drain voltage. We show that enhanced Coulomb interactions, prompt by the presence of the point contact, may…
Electrical characterization of few-layer MoS2 based field effect transistors with Ti/Au electrodes is performed in the vacuum chamber of a scanning electron microscope in order to study the effects of electron beam irradiation on the…
The mobility of charge carriers in a semiconductor nanowire is explored as a function of increasing radius, assuming low temperatures where impurity scattering dominates. The competition between increased cross-section and the concurrent…
Motivated by recent experiments on Si/SiGe quantum wells with a co-design of high electron mobility and large valley splitting [B. Paquelet Wuetz, et al., Nature Communications 14, 1385 (2023); D. D. Esposti, et al., arXiv:2309.02832],…
The two-dimensional transition metal dichalcogenides (TMDs) have been proposed as candidates for the channel material in future field effect transistor designs. The heterophase design which utilizes the metallic T- or T' phase of the TMD as…
We develop a generalized theory for the scattering process produced by interface roughness on charge carriers and which is suitable for any semiconductor heterostructure. By exploiting our experimental insights into the three-dimensional…
We calculate the transport properties of multilayer graphene, considering the effect of multisubband scattering in a high density regime, where higher subbands are occupied by charge carriers. To calculate the conductivity of multilayer…
The ultimate limitations on carrier mobilities in metal dichalcogenides, and the dynamics associated with carrier relaxation, are unclear. We present measurements of the frequency-dependent conductivity of multilayer dichalcogenide MoS2 by…
Tunnelling between two-dimensional electron systems has been studied in the magnetic field perpendicular to the systems planes. The satellite conductance peaks of the main resonance have been observed due to the electron tunnelling assisted…
We review the physics of charged impurities in the vicinity of graphene. The long-range nature of Coulomb impurities affects both the nature of the ground state density profile as well as graphene's transport properties. We discuss the…