Related papers: ALD grown zinc oxide with controllable electrical …
Niobium nitride (NbN) is a useful material for fabricating detectors because of its high critical temperature and relatively high kinetic inductance. In particular, NbN can be used to fabricate nanowire detectors and mm-wave transmission…
Zinc-iridium oxide (Zn-Ir-O) thin films have been demonstrated as a p-type conducting material. However, the stability of p-type conductivity with respect to chemical composition or temperature is still unclear. In this study we discuss the…
ZnSnN2 has recently garnered increasing interest as a potential solar absorber material due to its direct bandgap that is predicted to be tunable from 1.0-2.1 eV based on cation disorder. One important challenge to the further development…
Transparent and conductive ZnO:Ga thin films are prepared by laser molecular-beam epitaxy. Their electron properties were investigated by the temperature-dependent Hall-effect technique. The 300-K carrier concentration and mobility were…
The self-limiting nature of atomic layer deposition (ALD) makes it an appealing option for growing single layers of two-dimensional van der Waals (2D-VDW) materials. In this paper it is demonstrated that a single layer of a 2D-VDW form of…
In this paper, the atomic layer deposition (ALD) of ultra-thin films (<4 nm) of $Al_{2}O_{3}$ and $HfO_{2}$ on Au-supported monolayer (1L) $MoS_{2}$ is investigated, providing an insight on the nucleation mechanisms in the early stages of…
Epitaxial LaRh1/2Mn1/2O3 thin films have been grown on (001)-oriented LaAlO3 and SrTiO3 substrates using pulsed laser deposition. The optimized thin film samples are semiconducting and ferromagnetic with a Curie temperature close to 100 K,…
High drive current is a critical performance parameter in semiconductor devices for high-speed, low-power logic applications or high-efficiency, high-power, high-speed radio frequency (RF) analog applications. In this work, we demonstrate…
Zinc oxide is a wide-bandgap semiconductor which is considered a potential candidate for fabricating next-generation transparent spintronic devices. However, before this can be practically achieved, a thorough, scientific understanding of…
We report on the synthesis of low doping Zn$_{1-x}$Co$_x$O ($0<x<0.1$) thin films on (0001)-Al$_2$O$_3$ substrates. The films were prepared in an oxidizing atmosphere, using the pulsed laser deposition technique starting from Zn and Co…
Electrochemical water electrolysis, which produces clean energy carriers to mitigate carbon emissions, lacks suitable, low-cost electrodes for efficient oxygen evolution reaction (OER) in alkaline water splitting. To address this challenge,…
We study the magnetoresistance of yttrium iron garnet/Pt heterostructures in which the Pt layer was grown via atomic layer deposition (ALD). Magnetotransport experiments in three orthogonal rotation planes reveal the hallmark features of…
In this study, the characteristics of nickel thin film deposited by remote plasma atomic layer deposition (RPALD) on p-type Si substrate and formation of nickel silicide using rapid thermal annealing were determined.…
The dielectric properties of NiO thin films grown by pulsed laser deposition have been studied as a function of strain at temperature from 10 to 300 K. Above 150 K, the contribution of space-charge polarization to the dielectric…
During the growth of metal thin films on dielectric substrates at a given deposition temperature T, the film's morphology is conditioned by the magnitude and asymmetry of up- and downhill diffusion. Any severe change of this mechanism leads…
This paper addresses the effect of disorder on the carrier transport mechanism of atomic layer deposited ZnO thin films as has been investigated by temperature dependent electrical resistivity measurements in the temperature range of 4.2K…
Zinc nitride films were synthesized by reactive radio frequency (rf) magnetron sputtering of a zinc target using an Ar+N2 mixture. The as-deposited films were annealed in the air and O2 at 300 {\deg}C for 1 hr. The XRD measurements…
Thin gadolinium metallic layers were deposited by high-pressure sputtering in pure Ar atmosphere. Subsequently, in situ thermal oxidation was performed at temperatures ranging from 150 to 750 $^\circ$C. At an oxidation temperature of 500…
ScN material is an emerging semiconductor with an indirect bandgap. It has attracted attention for its thermoelectric properties, use as seed layers, and for alloys for piezoelectric application. ScN or other transition metal nitride…
We deposited Ag_2O films in PLD system on glass substrate for a fixed partial oxygen gas pressure (70 mili Torr) with the variation of laser energy from 75 to 215 mJ/Pulse. The XRD patterns confirm that the films have well crystallinity and…