Related papers: Spin Relaxation due to Charge Noise
We investigate the magnetic field and temperature dependence of the single-electron spin lifetime in silicon quantum dots and find a lifetime of 2.8 ms at a temperature of 1.1 K. We develop a model based on spin-valley mixing and find that…
We analyze decoherence of an electron in a double-dot due to the interaction with acoustic phonons. For large tunneling rates between the quantum dots, the main contribution to decoherence comes from the phonon emission relaxation…
We report on measurements of the spin relaxation time T1 of individual electron spins in the few electron regime of a Si/SiO2-based quantum dot (QD). Energy-spectroscopy of the QD has been performed using a charge sensing technique. The…
A pair of coupled dots with one electron in each dot can provide improvements in spin coherence, particularly at an electrical bias called the sweet spot, but few measurements have been performed on self-assembled dots in this regime. Here,…
We theoretically investigate the charge noise and dephasing in a metallic device in close proximity to a spin incoherent Luttinger liquid with a small but finite current. The frequency dependence of the charge noise exhibits a loss of…
We have investigated spin relaxation times in CdTe quantum dots doped with a single Mn atom, a prototype of a system where the interaction between a single charge carrier and a single spin takes place. A theoretical model that was used…
Strong magnetic field gradients can produce a synthetic spin-orbit interaction that allows for high fidelity electrical control of single electron spins. We investigate how a field gradient impacts the spin relaxation time T_1 by measuring…
We measure the spin dephasing of holes localized in self-assembled (InGa)As quantum dots by spin noise spectroscopy. The localized holes show a distinct hyperfine interaction with the nuclear spin bath despite the p-type symmetry of the…
We study the effect of charge and spin noise on singlet-triplet qubits in Si quantum dots. We set up a theoretical framework aimed at enabling experiment to efficiently identify the most deleterious defects, and complement it with the…
Electron spin relaxation induced by phonon-mediated s-d exchange interaction in a II-VI diluted magnetic semiconductor quantum dot is investigated theoretically. The electron-acoustic phonon interaction due to piezoelectric coupling and…
Highly accurate numerical results of phonon-induced two-electron spin relaxation in silicon double quantum dots are presented. The relaxation, enabled by spin-orbit coupling and the nuclei of $^{29}$Si (natural or purified abundance), are…
We investigate low-frequency noise in a spin-qubit device made in isotopically purified Si/Si-Ge. Observing sizable cross-correlations among energy fluctuations of different qubits, we conclude that these fluctuations are dominated by…
We expand on previous work that treats relaxation physics of low-lying excited states in ideal, single electron, silicon quantum dots in the context of quantum computing. These states are of three types: orbital, valley, and spin. The…
Coherent spin states in semiconductor quantum dots offer promise as electrically controllable quantum bits (qubits) with scalable fabrication. For few-electron quantum dots made from gallium arsenide (GaAs), fluctuating nuclear spins in the…
We investigate the spin relaxation and decoherence in a single-electron graphene quantum dot with Rashba and intrinsic spin-orbit interactions. We derive an effective spin-phonon Hamiltonian via the Schrieffer-Wolff transformation in order…
We present numerical results for electron spin relaxation rates for single and laterally coupled double GaAs quantum dots in a perpendicular magnetic field. As source of spin relaxation we consider hyperfine interaction with the nuclear…
We report that the electron spin relaxation time, T1, in a GaAs quantum dot with a spin-1/2 ground state has a 180 degree periodicity in the orientation of the in-plane magnetic field. This periodicity has been predicted for circular dots…
We study relaxation of a moving spin qubit caused by phonon noise. As we vary the speed of the qubit, we observe several interesting features in spin relaxation and the associated phonon emission, induced by Doppler effect. In particular,…
We have calculated spin relaxation rates in parabolic quantum dots due to the phonon modulation of the spin-orbit interaction in presence of an external magnetic field. Both, deformation potential and piezoelectric electron-phonon coupling…
Electron spins in gate-defined quantum dots provide a promising platform for quantum computation. In particular, spin-based quantum computing in gallium arsenide takes advantage of the high quality of semiconducting materials, reliability…