Related papers: Half-Semiconductor antiferromagnets and Spin-Gaple…
We analyze a metal-dielectric structure composed of a silicon nanoparticle coupled to a stack of split-ring resonators, and reveal the possibility of optically-induced antiferromagnetic response of such a hybrid meta-molecule with a…
Spin field-effect transistors (SFETs) are promising candidates for low-power spin-based electronics, yet existing realizations that rely on spin-orbit coupling are constrained by limited material choices and short spin-coherence lengths.…
Electric currents carrying a net spin polarization are widely used in spintronics, whereas globally spin-neutral currents are expected to play no role in spin-dependent phenomena. Here we show that, in contrast to this common expectation,…
A theory of spin-polarized electron transport in ferromagnet-semiconductor heterostructures, based on a unified semiclassical description of ballistic and diffusive transport in semiconductors, is outlined. The aim is to provide a framework…
The magnetic structure of antiferromagnetically ordered phases of quasi-one-dimensional organic conductors is studied theoretically at absolute zero based on the mean field approximation to the quarter-filled band with on-site and…
Zero-net-magnetization magnets possess ultradense and ultrafast application potential, benefiting from their intrinsic zero stray field and terahertz dynamics characteristics. Herein, we propose the concept of zero-net-magnetization hybrid…
Ferrimagnetic semiconductors, integrated with net magnetization, antiferromagnetic coupling and semi-conductivity, have constructed an ideal platform for spintronics. For practical applications, achieving high N$\acute{e}$el temperatures…
The future of spintronic and semiconductor applications demands materials with tailored electronic and magnetic properties. This study uses density functional theory to investigate the electronic structure of the half-metallic compound…
Synthetic antiferromagnetic layers (SAF) are incorporated into spin transfer nanopillars giving a layer composition [Co(bottom)/Ru/Co(fixed)]/Cu/Co(free), where square brackets indicate the SAF. The Co(bottom) and Co(fixed) layers are…
The coherent spin-polarized electron transport through a zigzag-edge graphene flake (ZGF), sandwiched between two semi-infinite armchair graphene nanoribbons, is investigated by means of Landauer-Buttiker formalism. To study the edge…
We propose a novel interaction-based route to half-metal state for interacting electrons on two-dimensional lattices. Magnetic field applied parallel to the lattice is used to tune one of the spin densities to a particular commensurate with…
Half-metallic Heusler compounds are of significant interest for spintronics. For device fabrication, compounds that can be epitaxially grown on III-V semiconductors are particularly attractive. We present a first-principles investigation of…
Sustaining exotic quantum mechanical phases at high temperatures is a long-standing goal of condensed matter physics. Among them, half-metals are spin-polarized conductors that are essential for realizing room-temperature spin current…
The search for half-metals and spin-gapless semiconductors has attracted extensive attention in material design for spintronics. Existing progress in such a search often requires peculiar atomistic lattice configuration and also lacks…
Ru$_{2-x}$Fe$_x$CrSi ( 0 $<$ x $<$1) system is theoretically predicted to be one of the very few known examples of robust half-metallic ferromagnet with 100\% spin polarization. Since Cr is considered to be the main contributor to…
Half metallic ferromagnetic compounds (HMF) are intensively explored for their potential in spintronics application. According to theoretical studies, HMF are those materials where the conduction mechanism is due to one type of spin state,…
We employ ab-initio electronic structure calculations to search for spin gapless semiconductors, a recently identified new class of materials, among the inverse Heusler compounds. The occurrence of this property is not accompanied by a…
Altermagnetism, a novel magnetic phase bridging ferromagnetism and antiferromagnetism, exhibits zero net magnetization due to its unique alternating spin arrangements, which cancel out macroscopic magnetization. This phase is characterized…
Carrier-induced ferromagnetic semiconductors (FMSs) have been intensively studied for decades as they have novel functionalities that cannot be achieved with conventional metallic materials. These include the ability to control magnetism by…
Using density-functional theory within the generalized gradient approximation, we show that Si-based heterostructures with 1/4 layer $\delta$-doping of {\em interstitial} Mn (Mn$_{\mathrm int}$) are half-metallic. For Mn$_{\mathrm int}$…