Related papers: Photoluminescence in amorphous MgSiO_3 silicate
Ce3+ is known to show broad optical emission peaking in the green spectral range. For the stabilization of 3-valent cerium in ceramic phosphors such as calcium scandate CaSc2O4, often co-doping with sodium for charge compensation is…
The phase diagram of $Pr_{1-x}Ca_xMnO_3$ is modified x $\le$ 0.3, which suggests a reevaluation of the phase diagram of other manganites in that doping region. Rather than an orbital ordered phase reaching up to high temperatures of…
It has been recently revealed that strontium titanate (SrTiO$_3$) displays persistent photoconductivity with unique characteristics: it occurs at room temperature and lasts over a very long period of time. Illumination of SrTiO$_3$ crystals…
The relationship between the luminescence at 1.9 eV and the absorption bands at 2.0 eV and at 4.8 eV were investigated in a wide variety of synthetic silica samples exposed to different gamma- and beta-ray irradiation doses. We found that…
Here, we report the full-fledged journey towards the material synthesis and characterization of few-layered/thin WSe$_2$ using sputtered W-films on SiO$_2$/Si substrates followed by electrical studies under dark and illumination conditions.…
Silicon photonics has attracted significant interest in recent years due to its potential in integrated photonics components (1,2) as well as all-dielectric meta-optics elements.(3) Strong photon-photon interactions, aka optical…
Laser cooling of solids currently has a temperature floor of 50 - 100 K. We propose a method that could overcome this using defects, such as diamond color centers, with narrow electronic manifolds and bright optical transitions. It exploits…
We report a combined experimental and computational study of the optical properties of individual silicon telluride (Si2Te3) nanoplates. The p-type semiconductor Si2Te3 has a unique layered crystal structure with hexagonal closed-packed Te…
A recombination radiation line of electron-hole plasma, observed in electroluminescence spectra of tunneling silicon MOS diodes, has been investigated at the temperature > 300 K. The internal quantum efficiency of the luminescence, equal to…
Amorphization of silicon is crucial to applications in photonics, microelectronics and solar cell technologies. Ultrafast lasers have been used to generate amorphous silicon from crystalline silicon using rapid nonthermal melting and…
We study the linear polarization properties of the photoluminescence of the neutral and negatively charged nitrogen vacancies and neutral vacancies in diamond crystals as function of their symmetry and their response to strong external…
We performed high-temperature luminescence studies of silicon-vacancy color centers obtained by ion implantation in single crystal diamond. We observed reduction of the integrated fluorescence upon increasing temperature, ascribable to a…
Silicon is now firmly established as a high performance photonic material. Its only weakness is the lack of a native electrically driven light emitter that operates CW at room temperature, exhibits a narrow linewidth in the technologically…
In this paper we study the extended atmosphere of the late-type supergiant Alpha Orionis. Infrared spectroscopy of red supergiants reveals strong molecular bands, some of which do not originate in the photosphere but in a cooler layer of…
The deposition of one silicon monolayer on the silver (111) substrate in the temperature range 150-300$^\circ$C, gives rise to a mix of (4$\times$4), ($2\sqrt{3}\times 2\sqrt{3}$)R30$^\circ$ and ($\sqrt{13}\times\sqrt{13}$)R13.9$^\circ$…
The effect of alloy disorder on the optical density of states and the average room temperature carrier statistics in GaInNAs quantum wells is discussed. A red shift between the peak of the room temperature photoluminescence and the surface…
The discovery of a superconducting phase in sulfur hydride under high pressure with a critical temperature above 200 K has provided a new impetus to the search for even higher $T_c$. Theory predicted and experiment confirmed that the phase…
High-quality Al0.37In0.63N layers have been grown by reactive radio-frequency (RF) sputtering on sapphire, glass and Si (111) at low substrate temperature (from room temperature to 300{\deg}C). Their structural, chemical and optical…
Currently, Fe doping in the ~10^18 cm-3 range is the most widely-available method for producing semi-insulating single crystalline beta-Ga2O3 substrates. Red luminescence features have been reported from multiple types of Ga2O3 samples…
The photoluminescence of oxidized and fluorinated nominally pure silica glasses, which have good optical transparency in the optical gap, has been investigated under excitation by excimer lasers. The data are compared with the data for…