Related papers: Silicon avalanche photodiode operation and lifetim…
We have performed a detailed study of the dependence of afterpulse probability in InGaAs/InP sine-gated SPAD on the dead time and the existing approach for its implementation. We demonstrated an electrical scheme combining sinusoidal gating…
As the Advanced CCD Imaging Spectrometer (ACIS) on the Chandra X-ray Observatory completes a quarter century of on orbit operations, it continues to perform well and produce spectacular scientific results. The response of ACIS has evolved…
We demonstrate a method to reduce number fluctuations in an ultracold atomic sample using real-time feedback. By measuring the Faraday rotation of an off-resonant probe laser beam with a pair of avalanche photodetectors in a polarimetric…
Non-polar (11-20) a-plane quantum dots (QDs) are strong candidates for both > 200 K on-chip ultrafast polarized single-photon generation and the investigation of high temperature semiconductor QD photophysics. In this work, we report…
The performance of amorphous selenium (a-Se) as a cryogenic photodetector material is evaluated through a series of experiments using laterally structured devices operated in a custom optical test stand. These studies investigate the…
The SiTian project, with its vast field of view, will become an ideal platform for asteroid scientific research. In this study, we develop a pipeline to analyze the photometry of asteroids and derive their periods from the data collected by…
Low Gain Avalanche Detectors (LGADs) are silicon semiconductor sensors with an implanted thin p-doped multiplication layer that is designed to provide low gain. Most importantly, LGADs are specifically engineered to provide excellent…
The distinctive characteristics of light, such as high-speed and low-loss propagation, low cross-talk and low power consumption, along with photons unique quantum properties, make it most suitable for various applications in communication,…
We present a gated silicon single photon detector based on a commercially available avalanche photodiode. Our detector achieves a photon detection efficiency of 45\pm5% at 808 nm with 2x 10^-6 dark count per ns at -30V of excess bias and…
Avalanche photodetectors (APDs) are key components in optical communication systems due to their increased photocurrent gain and short response time as compared to conventional photodetectors. A detector design where the multiplication…
We introduce an approach to calculate the thermodynamic oxidation and reduction potentials of semiconductors in aqueous solution. By combining a newly-developed ab initio calculation for compound formation energy and band alignment with…
It is well known that avalanche photodiodes operated in the Geiger mode above the breakdown voltage offer a virtually infinite sensitivity and time accuracy in the picosecond range that can be used for single photon detection. However,…
Due to their high frame rates, high sensitivity, low noise, and low dark current, SAPHIRA detectors provide new capabilities for astronomical observations. The SAPHIRA detector is a 320x256@24 $\mu$m pixel HgCdTe linear avalanche photodiode…
The measurement of light characteristics at the single- and few photon level plays a key role in many quantum optics applications. Often photodetection is preceded with the transmission of quantum light over long distances in optical fibers…
Temporal photon correlation measurement, instrumental to probing the quantum properties of light, typically requires multiple single photon detectors. Progress in single photon avalanche diode (SPAD) array technology highlights their…
Silicon photomultipliers present saturation effects as they have a limited number of pixels and work in Geiger mode. Their response to light pulses in the nonlinear region is very complex for two reasons: pixel recharging after an avalanche…
Laboratory measurements of unpolarized and polarized absorption spectra of various samples and crystal stuctures of silicon carbide (SiC) are presented from 1200--35,000 cm$^{-1}$ ($\lambda \sim$ 8--0.28 $\mu$m) and used to improve the…
The ATLAS Forward Physics (AFP) project plans to install 3D silicon pixel detectors about 210 m away from the interaction point and very close to the beamline (2-3 mm). This implies the need of slim edges of about 100-200 $\mu$m width for…
Silicon photomultipliers (SiPMs) are being considered as potential replacements for conventional photomultiplier tubes (PMTs). However, a significant disadvantage of SiPMs is crosstalk (CT), wherein photons propagate through other pixels,…
A Silicon Photomultiplier, SiPM, is a metasystem of Avalanche Photodiodes, APDs, which embedded in a specific purpose electronic, becomes a metadevice with unique and useful advanced functionalities to capture, transmit and analyze…