Related papers: Defect recombination induced by density-activated …
Layered indium selenide (InSe) is a van der Waals solid that has emerged as a promising material for high-performance ultrathin solar cells. The optoelectronic parameters that are critical to photoconversion efficiencies, such as hot…
Hexagonal boron nitride (hBN) has been experimentally shown to exhibit room-temperature single-photon emission. This emission is attributed to defect states in the wide band-gap of hBN, which allow new optical transitions between these…
Previous works concerning active galactic nuclei (AGN) variability (e.g., Blandford \& McKee 1982) have assumed that the emission characteristics of illuminated clouds are purely a function of the instant continuum flux to which they are…
The optical response of a heavily doped quantum well, with two occupied subbands, has been investigated as a function of the electronic density. It is shown that the two optically active transitions are mutually coupled by dipole-dipole…
Single-photon emitters in gallium nitride (GaN) are gaining interest as attractive quantum systems due to the well-established techniques for growth and nanofabrication of the host material, as well as its remarkable chemical stability and…
We report on the achievement of a two-dimensional electron gas in completely undoped In[0.75]Al[0.25]As/In[0.75]Ga[0.25]As metamorphic quantum wells. Using these structures we were able to reduce the carrier density, with respect to…
The intriguing physics of carrier-carrier interactions, which likewise affect the operation of light emitting devices, stimulate the research on semiconductor structures at high densities of excited carriers, a limit reachable at large…
We report on a series of three-dimensional magnetohydrodynamic simulations of active galactic nucleus (AGN) jet propagation in realistic models of magnetized galaxy clusters. We are primarily interested in the details of energy transfer…
Determining the types and concentrations of vacancies present in intentionally doped GaN is a notoriously difficult and long-debated problem. Here we use an unconventional approach, based on thermal transport modeling, to determine the…
We generate silicon vacancy related defects in high-quality epitaxial silicon carbide layers by means of electron irradiation. By controlling the irradiation fluence, the defect concentration is varied over several orders of magnitude. We…
Hybrid structures incorpora1ng both III-nitride and Transi1on Metal Dichalcogenide (TMD) semiconductors have strong applica1on poten1al for light harves1ng and optoelectronics. Here we have inves1gated the proper1es of hybrid structures…
We have demonstrated surface-plasmon induced change in spontaneous emission rate in the ultraviolet regime at ~ 375-380 nm, using AlN/GaN quantum dots (QD). Using time-resolved and continuous-wave photoluminescence measurements, the…
Frequency dependencies of optical characteristics (reflection, transmission and absorption of light) of a quantum well are investigated in a vicinity of interband resonant transitions in a case of two closely located excited energy levels.…
The diffusion of electron-hole pairs, which are excited in an intrinsic graphene by the ultrashort focused laser pulse in mid-IR or visible spectral region, is described for the cases of peak-like or spread over the passive region…
We study the origin of bimodal emission in AlGaN/AlN QD superlattices displaying high internal quantum efficiency (around 50%) in the 230-300 nm spectral range. The secondary emission at longer wavelengths is linked to the presence of…
High-conductivity undoped GaN/AlN 2D hole gases (2DHGs), the p-type dual of the AlGaN/GaN 2D electron gases (2DEGs), have offered valuable insights into hole transport in GaN and enabled the first GaN GHz RF p-channel FETs. They are an…
We study the controlled introduction of defects in GaMnAs by irradiating the samples with energetic ion beams, which modify the magnetic properties of the DMS. Our study focuses on the low-carrier-density regime, starting with as-grown…
In some instances, e.g. near phase transitions, thermodynamic fluctuations become macroscopically relevant, and relative amplitudes grow far above the standard $N^{-1/2}$ scale, with $N$ the number of particles. Such large fluctuations are…
We investigate electronic transport in n-i-n GaN nanowires with and without AlN double barriers. The nanowires are grown by catalyst-free, plasma-assisted molecular beam epitaxy enabling abrupt GaN/AlN interfaces as well as longitudinal…
The photoluminescence of III-V wide band-gap semiconductors as InGaN is characterized by local intensity fluctuations, known as 'blinking points', that despite decades of research are not yet completely understood. In this letter we report…