Related papers: High Q SiC microresonators
Hybrid SiN-QD microlasers coupled to a passive SiN output waveguide with 7{\mu}m diameter and record low threshold density of 27 {\mu}J cm-2 are demonstrated. A new design and unique processing scheme starting from SiN/QD/SiN stacks offer…
The extremely low dark current of silicon carbide (SiC) detectors, even after high-fluence irradiation, was utilized to develop a beam monitoring system for a wide range of particle rates, i.e., from the kHz to the GHz regime. The system is…
We fabricate and characterize superconducting through-silicon vias and electrodes suitable for superconducting quantum processors. We measure internal quality factors of a million for test resonators excited at single-photon levels, on…
Conducting nanowires possess remarkable physical properties unattainable in bulk materials. However our understanding of their transport properties is limited by the difficulty of connecting them electrically. In this Letter we investigate…
We present the experimental realization of ordered arrays of hyper-doped silicon nanodisks, which exhibit a localized surface plasmon resonance. The plasmon is widely tunable in a spectral window between 2 and 5 $\mu$m by adjusting the free…
Owing to their ability to confine electromagnetic energy in ultrasmall dielectric volumes, micro-disk, ring and toroid resonators hold interest for both specific applications and fundamental investigations. Generally, contributions from…
We report an efficient energy-time entangled photon-pair source based on four-wave mixing in a CMOS-compatible silicon photonics ring resonator. Thanks to suitable optimization, the source shows a large spectral brightness of 400\,pairs of…
Si3N4 is an excellent material for applications of nanophotonics at visible wavelengths due to its wide bandgap and moderately large refractive index (n $\approx$ 2.0). We present the fabrication and characterization of Si3N4 photonic…
Silicon-based integrated photonics has demonstrated significant advances in miniaturization and performance, yet critical challenges remain in achieving efficient on-chip communication at high bandwidths. Plasmonic devices on silicon and…
We demonstrate optomechanically-mediated electromagnetically-induced transparency and wavelength conversion in silicon nitride (Si3N4) microdisk resonators. Fabricated devices support whispering gallery optical modes with a quality factor…
To cope with environments with high levels of radiation, non-silicon semiconductors such as silicon carbide detectors are being proposed for instrumentation. 4H-SiC diodes for radiation detection have been fabricated in the IMB-CNM Clean…
Dielectric metasurfaces supporting quasi-bound states in the continuum (qBICs) enable high field enhancement with narrow-linewidth resonances in the visible and near-infrared ranges. The resonance emerges when distorting the meta-atom's…
Photonic integrated circuits that exploit nonlinear optics in order to generate and process signals all-optically have achieved performance far superior to that possible electronically - particularly with respect to speed. We review the…
In this work, we demonstrate a compact toolkit of inverse-designed topologically optimized silicon-photonic devices that are arranged in a plug-and-play fashion to realize many different photonic integrated circuits, both passive and…
The emerging field of silicon photonics seeks to unify the high bandwidth of optical communications with CMOS microelectronic circuits. Many components have been demonstrated for on-chip optical communications, including those that utilize…
Bound states in the continuum (BICs) represent localized modes with energies embedded in the continuous spectrum of radiating waves. BICs were discovered initially as a mathematical curiosity in quantum mechanics, and more recently were…
The lack of high power integrated lasers have been limiting silicon photonics. Despite much progress made in chip-scale laser integration, power remains below the level required for key applications. The main inhibiting factor for high…
Silicon carbide (SiC) is a semiconductor used in quantum information processing, microelectromechanical systems, photonics, power electronics, and harsh environment sensors. However, its high temperature stability, high breakdown voltage,…
Superconducting boron doped silicon is a promising material for integrated silicon quantum devices. In particular, its low electronic density and moderate disorder make it a suitable candidate for the fabrication of large inductances with…
We have fabricated highly-luminescent samples with erbium-doped amorphous silicon sub-oxide (a-SiOx<Er>) layers on SiO2/Si substrates. The layers are designed to provide a resonance with large modal overlap with the active material and with…