Related papers: Controllable valley and spin transports in ferroma…
We determine, using a self consistent method, the charge and spin currents in ballistic Josephson junctions consisting of ferromagnetic ($F$) layers sandwiched between superconducting ($S$) electrodes ($SFS$-type junctions). When there are…
A mesoscopic spin valve is used to determine the effective spin polarization of electrons tunneling from and into ferromagnetic transition metals at finite voltages. The tunneling spin polarization from the ferromagnet (FM) slowly decreases…
We demonstrate that information can be transmitted and processed with pure spin currents in silicon. Fe/Al2O3 tunnel barrier contacts are used to produce significant electron spin polarization in the silicon, generating a spin current which…
Novel spin transport behavior is theoretically shown to result from replacing the usual metal (or poly-silicon) gate in a silicon field-effect transistor with a ferromagnet, separated from the semiconductor by an ultra-thin oxide. The…
It has been predicted theoretically that an unconventional odd-frequency spin-triplet component of superconducting order parameter can be induced in multilayered ferromagnetic structures with non-collinear magnetization. In this work we…
So far, selective excitation of a desired valley in the Brillouin zone of a hexagonal two-dimensional material has relied on using circularly polarized fields. We theoretically demonstrate a way to induce, control, and read valley…
We observe and analyze tunable relaxation of a pure spin current by an antiferromagnet in spin-valves. This is achieved by carefully controlling the angle between a resonantly excited ferromagnetic layer pumping the spin current and the…
We consider theoretically a current flowing perpendicular to interfaces of a spin-valve type ferromagnetic metallic junction. For the first time an effective approach is investigated to calculate a simultaneous action of the two current…
We study the full counting statistics of electronic transport through a single-level quantum dot weakly coupled to two leads, with either one or both of them being ferromagnetic. The interplay of Coulomb interaction and finite spin…
The conversion of spin information into electrical signals is indispensable for spintronic technologies. Spin-to-charge conversion in ferromagnetic tunnel contacts is well-described using linear (spin-)transport equations, provided that…
In valleytronic devices, the valley transport of electrons can carry not only charge but also spin angular momentum (SAM) and orbital angular momentum (OAM). However, investigations on thermoelectric transport of OAM manipulated by valley…
We have measured the tunnelling current in Nb/Nb$_x$O$_y$/Ni planar tunnel junctions at different temperatures. The junctions are in the intermediate transparency regime. We have extracted the current polarization of the metal/ferromagnet…
Valley pseudospin, the quantum degree of freedom characterizing the degenerate valleys in energy bands, is a distinct feature of two-dimensional Dirac materials. Similar to spin, the valley pseudospin is spanned by a time reversal pair of…
We investigate the optical response of the silicene and similar materials, such as germanene, in the presence of an electrically tunable band gap for variable doping. The interplay of spin orbit coupling, due to the buckled structure of…
We theoretically study the spin-dependent transport in a ferromagnet/superconductor/ferro-magnet double barrier tunnel junction. The spin-polarized tunneling currents give rise to spin imbalance in the superconductor. The resulting…
We investigate the electronic dispersion and transport properties of graphene/WSe$_{2}$ heterostructures in the presence of a proximity-induced spin-orbit coupling $\lambda_{v}$, sublattice potential $\Delta$, and an off-resonant circularly…
Valleytronics is rapidly emerging as an exciting area of basic and applied research. In two dimensional systems, valley polarisation can dramatically modify physical properties through electron-electron interactions as demonstrated by such…
In bilayer graphene, electrostatic confinement can be realized by a suitable design of top and back gate electrodes. We measure electronic transport through a bilayer graphene quantum dot, which is laterally confined by gapped regions and…
We present a theoretical study of spin-dependent transport through a ferromagnetic domain wall. With an increase of the number of components of the exchange coupling, we have observed that the variance of the conductance becomes half. As…
The electronic properties of the novel two dimensional (2D) material silicene are strongly influenced by the application of a perpendicular electric field $E_z$ and of an exchange field $M$ due to adatoms positioned on the surface or a…