Related papers: Transient and self-limited nanostructures on patte…

We address the mechanism of early stages of growth and shape transition of the unique nanowall network (NwN) nanostructure of GaN by experimentally monitoring its controlled growth using PA-MBE and complementing it by…

Mott transitions in real materials are first order and almost always associated with lattice distortions, both features promoting the emergence of nanotextured phases. This nanoscale self-organization creates spatially inhomogeneous…

Surface probes such as scanning tunneling microscopy (STM) have detected complex patterns at the nanoscale, indicative of electronic inhomogeneity, in a variety of high temperature superconductors. In cuprates, the pattern formation is…

Periodic metallic gratings on substrates can support a range of electromagnetic modes, such as leaky waveguide, guided-resonant, and Fabry-Perot (FP) cavity modes, which can strongly modulate optical transmission under resonant excitation.…

The ability to emit narrow exciton lines, preferably with a clearly defined polarization, is one of the key conditions for the use of nanostructures based on III-VI monochalcogenides and other layered crystals in quantum technology to…

Structured quantum light is crucial for high-dimensional quantum information processing, yet its direct generation from quantum emitters remains challenging due to their intrinsic locality and omnidirectional radiation. Metasurfaces have…

The investigation of the Localized Surface Plasmon Resonance for plasmonic nanoparticles has opened new perspectives for optical nanosensors. Today, an issue in plasmonics is the development of large scale and low cost devices. We focus…

Employing the Ginzburg-Landau phase-field theory, a new coupled dynamic thermo-mechanical 3D model has been proposed for modeling the cubic-to-tetragonal martensitic transformations in shape memory alloy (SMA) nanostructures. The…

A single-electron transistor has been realized in a Ga[Al]As heterostructure by oxidizing lines in the GaAs cap layer with an atomic force microscope. The oxide lines define the boundaries of the quantum dot, the in-plane gate electrodes,…

The discovery of topological phases in condensed matter systems has changed the modern conception of phases of matter. The global nature of topological ordering makes these phases robust and hence promising for applications. However, the…

Atomic self-ordering to a crystalline phase in optical resonators is a consequence of the intriguing non-linear dynamics of strongly coupled atom motion and photons. Generally the resulting phase diagrams and atomic states can be largely…

The capability to embed self-assembled quantum dots (QDs) at predefined positions in nanophotonic structures is key to the development of complex quantum photonic architectures. Here, we demonstrate that QDs can be deterministically…

We propose the creation of a two-dimensional topological semimetal in a semiconductor artificial lattice with triangular symmetry. An in-plane magnetic field drives a quantum phase transition between the topological insulating and…

Polymer-grafted nanoparticles are versatile building blocks that self-assemble into a rich diversity of mesostructures. Coarse-grained molecular simulations have commonly accompanied experiments by resolving structure formation pathways and…

Metasurfaces play a key role in functionalizing light at the nanoscale. Existing dielectric metasurfaces, however, are often limited to geometric primitives and their usage in emergent hybrid metasurfaces is hampered as confinement of light…

We study theoretically the nonlinear optical response of a two-dimensional semiconductor quantum dot supercrystal under a resonant continuous wave excitation. A single quantum dot is modeled as a three-level ladder-like system with the…

We report the growth of self-assembled Bi2Se3 quantum dots (QDs) by molecular beam epitaxy on GaAs substrates using the droplet epitaxy technique. The QD formation occurs after anneal of Bismuth droplets under Selenium flux.…

We study (In,Ga)(As,Sb)/GaAs quantum dots embedded in a GaP (100) matrix, which are overgrown by a thin GaSb capping layer with variable thickness. Quantum dot samples are studied by temperature-dependent photoluminescence, and we observe…

We fabricated GaAs/AlGaAs quantum dots by droplet epitaxy method, and obtained the geometries of the dots from scanning transmission electron microscopy data. Post-thermal annealing is essential for the optical activation of quantum dots…

We evidence the influence of surface effects for InAs quantum dots embedded into GaAs photonic nanowires used as efficient single photon sources. We observe a continuous temporal drift of the emission energy that is an obstacle to resonant…