Related papers: Emerging Weak Localization Effects on Topological …
Heterostructures made from topological and magnetic insulators promise to form excellent platforms for new electronic and spintronic functionalities mediated by interfacial effects. We report the results of a first-principles density…
Weak antilocalization (WAL) and linear magnetoresistance (LMR) are two most commonly observed magnetoresistance (MR) phenomena in topological insulators (TIs) and often attributed to the Dirac topological surface states (TSS). However,…
In contrast to electron (fermion) systems, topological phases of charge neutral bosons have been poorly understood despite recent extensive research on insulating magnets. The most important unresolved issue is how the inevitable…
We report transport studies on the layered van der Waals topological crystalline insulator Ta$_2$Pd$_3$Te$_5$. The temperature-dependent resistance at high temperature is dominated by a bulk insulating gap and tend to saturate at low…
We provide a characterization of tunneling between coupled topological insulators in 2D and 3D under the influence of a ferromagnetic layer. We explore conditions for such systems to exhibit integer quantum Hall physics and localized…
Bismuth chalcogenides are the most studied 3D topological insulators. As a rule, at low temperatures thin films of these materials demonstrate positive magnetoresistance due to weak antilocalization. Weak antilocalization should lead to…
Quantum anomalous Hall effect (QAHE) has been experimentally observed in magnetically doped topological insulators. However, ultra-low temperature (usually below 300 mK), which is mainly attributed to inhomogeneous magnetic doping, becomes…
When time-reversal symmetry is weakly broken and interactions are neglected, the surface of a $Z_{2}$ topological insulator supports a half-quantized Hall conductivity $\sigma_{S} = e^{2}/(2h)$. A surface Hall conductivity in an insulator…
The quantum anomalous Hall effect (QAHE) that emerges under broken time-reversal symmetry in topological insulators (TI) exhibits many fascinating physical properties for potential applications in nano-electronics and spintronics. However,…
We investigate a magnetic proximity effect on Dirac surface states of topological insulator (TI) induced by a Bi$_2$Se$_3$/EuS interface, using density-functional theory (DFT) and a low-energy effective model, motivated by a recent…
Thin layers of topological insulator materials are quasi-two-dimensional systems featuring a complex interplay between quantum confinement and topological band structure. To understand the role of the spatial distribution of carriers in…
Absence of backscattering and occurrence of weak anti-localization are two characteristic features of topological insulators. We find that the introduction of defects results in the appearance of a negative contribution to magnetoresistance…
Magnetic devices are a leading contender for implementing memory and logic technologies that are nonvolatile, that can scale to high density and high speed, and that do not suffer wear-out. However, widespread applications of magnetic…
We observe an unusual behavior of the spin Hall magnetoresistance (SMR) measured in a Pt ultra-thin film deposited on a ferromagnetic insulator, which is a tensile-strained LaCoO3 (LCO) thin film with the Curie temperature Tc=85K. The SMR…
We use magneto-conductivity to study the magnetic proximity effect on surface states of doped topological insulators. Our bilayers consist of a layer of Fe$_7$Se$_8$, which is a metallic ferrimagnet and a layer of…
Three-dimensional topological insulator films in contact with magnetic layers exhibit intriguing magneto-optical and magnetoelectric phenomena, but little is known beyond the linear response regime. We demonstrate that the presence of two…
Controlling magnetic order in magnetic topological insulators (MTIs) is a key to developing spintronic applications with MTIs, and is commonly achieved by changing the magnetic doping concentration, which inevitably affects…
Realizing axion insulator state with a uniform magnetization considerably facilitates experimental explorations of the intriguing topological magnetoelectric effect, a hallmark of three-dimensional (3D) topological insulators (TIs). Through…
We report electrical (angular magneto-resistance, and Hall), thermal (heat capacity) and spectroscopic (Raman, x-ray photo electron, angle resolved photo electron) characterization of bulk Bi2Se3 topological insulator, which is being is…
We present low-temperature transport measurements of a gate-tunable thin film topological insulator system that features high mobility and low carrier density. Upon gate tuning to a regime around the charge neutrality point, we infer an…