Related papers: Reservoir model for two-dimensional electron gases…
In In_xGa_{1-x}As/n-GaAs double quantum wells (DQWs) containing an electron gas, the magnetoresistance (MR) peculiarities under parallel magnetic fields caused by the passing of the tunnel gap edges through the Fermi level are revealed.…
An unusually wide plateau in the quantized Hall resistance has been revealed for a MQW heterostructure of wide p-GeSi / Ge / p-GeSi quantum wells with the Fermi energy comparable to the well bottom bending amplitude. This plateau exists in…
We investigate carrier transport in a single 22 nm-thick double-gated Si quantum well device, which has independent contacts to electrons and holes. Conductance, Hall density and Hall mobility are mapped in a broad double-gate voltage…
We report on the experimental observation of the quantum oscillations in microwave magnetoabsorption of a high-mobility two-dimensional electron gas induced by Landau quantization. Using original resonance-cavity technique, we observe two…
We report systematic quantum Hall transport experiments on Fabry-Perot electron interferometers at ultra-low-temperatures. The GaAs/AlGaAs heterostructure devices consist of two constrictions defined by etch trenches in 2D electron layer,…
Magneto-transport measurements are performed on two-dimensional GaAs electron systems to probe the quantum Hall (QH) effect at low magnetic fields. Oscillations following the Shubnikov-de Haas (SdH) formula are observed in the transition…
We have observed in a low density two-dimensional hole system (2DHS) of extremely high quality (with hole density p=1.6x10^{10} cm^{-2} and mobility \mu=0.8x10^6 cm^2/Vs) that, as the 2DHS is continuously tilted with respect to the…
We present the first experimental study of the double-quantum-well (DQW) system made of 2D layers with inverted energy band spectrum: HgTe. The magnetotransport reveals a considerably larger overlap of the conduction and valence subbands…
We report on theoretical and experimental investigations of the integer quantized Hall effect in narrow channels at various mobilities. The Hall bars are defined electrostatically in two-dimensional electron systems by biasing metal gates…
We present in this paper experimental results on the transport hysteresis in electron double quantum well structures. Exploring the measurement technique of fixing the magnetic field and sweeping a front gate voltage (Vg), we are able to…
We report on observation of an unconventional structure of the quantum Hall effect (QHE) in a $ p$-type HgTe/Cd$_x$Hg$_{1-x}$Te double quantum well (DQW) consisting of two HgTe layers of critical width. The observed QHE is a reentrant…
In high-mobility two-dimensional electron gases Landau levels are already formed at very small magnetic field values. Such two-dimensional electron gases show a huge negative magnetoresistance at low temperatures and an unexpected and very…
Effect of dc electric field on transport of highly mobile 2D electrons is studied in wide GaAs single quantum wells placed in titled magnetic fields. The study shows that in perpendicular magnetic field resistance oscillates due to electric…
We measure the Hall conductivity of a two-dimensional electron gas formed at a GaAs/AlGaAs heterojunction in the terahertz regime close to the cyclotron resonance frequency by employing a highly sensitive Faraday rotation method coupled…
We report simultaneous quasi-dc magnetotransport and high frequency surface acoustic wave measurements on bilayer two-dimensional electron systems in GaAs. Near strong integer quantized Hall states a strong magnetic field sweep hysteresis…
We have investigated the magnetoresistance of strongly asymmetric double-well structures formed by a thin AlGaAs barrier grown far from the interface in the GaAs buffer of standard heterostructures. In magnetic fields oriented parallel to…
Low-temperature in-plane magnetotransport measurements have been performed on adsorbate-induced electron systems formed at in-situ cleaved surfaces of p-type InAs. The Ag-coverage dependence of the surface electron density strongly supports…
A two-dimensional array of quantum dots in a magnetic field is considered. The electrons in the quantum dots are described as unitary random matrix ensembles. The strength of the magnetic field is such that there is half a flux quantum per…
We calculate using the Boltzmann transport theory the density dependent mobility of two-dimensional (2D) electrons in GaAs, SiGe and AlAs quantum wells as well as of 2D holes in GaAs quantum wells. The goal is to precisely understand the…
Results of detailed investigations of the conductivity and Hall effect in gated single quantum well GaAs/InGaAs/GaAs heterostructures with two-dimensional electron gas are presented. A successive analysis of the data has shown that the…