Related papers: Collective Spin-Hall Effect for Electron-Hole Grat…
We show that two types of spin-orbit coupling in the 2 dimensional hole gas (2DHG), with and without inversion symmetry breaking, contribute to the intrinsic spin Hall effect\cite{murakami2003,sinova2003}. Furthermore, the vertex correction…
We investigate the spin dynamics of high-mobility two-dimensional electrons in GaAs/AlGaAs quantum wells grown along the $[001]$ and $[110]$ directions by time-resolved Faraday rotation at low temperatures. In measurements on the…
In a GaAs/AlGaAs quantum well of electron density 1x10^{11} cm^{-2} we observe a fractional quantum Hall effect (FQHE) at filling factors nu=4/11, and 5/13, and weaker states at nu=6/17, 4/13, 5/17 and 7/11. These sequences of fractions do…
The quantum Hall effect, which exhibits a number of unusual properties, is studied in a gated 1000-nm-thick HgTe film, nominally a three-dimensional system. A weak zero plateau of Hall resistance, accompanied by a relatively small value of…
We present here the results from a density dependent study of the activation energy gaps of the fractional quantum Hall effect states at Landau level fillings \nu=8/3 and 7/3 in a series of high quality quantum wells. In the density range…
We study theoretically the parallel quantum wires of the experiment by Auslaender et al. [Science 308, 88 (2005)] at low electron density. It is shown that a Hall effect as observed in two- or three-dimensional electron systems develops as…
Recent theory predicted that the Quantum Spin Hall Effect, a fundamentally novel quantum state of matter that exists at zero external magnetic field, may be realized in HgTe/(Hg,Cd)Te quantum wells. We have fabricated such sample structures…
We present quantitative measurements and calculations of the spin-orbit induced zero-magnetic-field spin-splitting in two-dimensional (2D) hole systems in modulation-doped GaAs (311)A quantum wells. The results show that the splitting is…
Based on a proper definition of the spin current, we investigate the spin-Hall effect of heavy holes in narrow quantum wells in the presence of Rashba spin-orbit coupling by using a spin-density matrix approach. In contrast to previous…
The quantum spin Hall (QSH) state is a topologically non-trivial state of quantum matter which preserves time-reversal symmetry; it has an energy gap in the bulk, but topologically robust gapless states at the edge. Recently, this novel…
By associating a spin-orbit interaction with a non-Abelian gauge potential, we theoretically present a spin polarization in a quite general form using an effective Yang-Mills field and a usual electromagnetic field. In this gauge invariant…
We predict a new effect in electronic bilayers: the {\it Spin Hall Drag}. The effect consists in the generation of spin accumulation across one layer by an electric current along the other layer. It arises from the combined action of…
Spin-orbit coupling provides a versatile tool to generate and to manipulate the spin degree of freedom in low-dimensional semiconductor structures. The spin Hall effect, where an electrical current drives a transverse spin current and…
Electrically generated spin accumulation due to the spin Hall effect is imaged in n-GaAs channels using Kerr rotation microscopy, focusing on its spatial distribution and time-averaged behavior in a magnetic field. Spatially-resolved…
The fractional quantum Hall effect (FQHE) occurs at certain magnetic field strengths B*(n) in a two-dimensional electron gas of density n at strong magnetic fields perpendicular to the plane of the electron gas. At these magnetic fields…
We study intrinsic spin Hall effect in p-type GaAs quantum well structure described by Luttinger Hamiltonian and a Rashba spin-orbit coupling arising from the structural inversion symmetry breaking. The Rashba term induces an energy level…
We examine effects of inversion asymmetry of a GaAs/Al0.3Ga0.7As quantum well (QW) on electron-nuclear spin coupling in the fractional quantum Hall (QH) regime. Increasing the QW potential asymmetry at a fixed Landau-level filling factor…
The results of systematic experimental studies of quantum oscillations of resistivity, Hall coefficient and capacitance in GaAs and In$_x$Ga$_{1-x}$As quantum wells (QWs) with a simple electron spectrum and HgTe QWs with a complicated…
We discuss the orbital effect of a tilted magnetic field on the quantum Hall effect in parabolic quantum wells. Many-body states realized at the fractional 1/3 and 1/2 filling of the second electronic subband are studied using finite-size…
Conduction electron spin lifetimes ($T_1$) and spin coherence times ($T_2$) are strongly modified in semiconductor quantum wells by electric fields. Quantitative calculations in GaAs/AlGaAs quantum wells at room temperature show roughly a…