Related papers: Strain evolution in GaN Nanowires: from free-surfa…
The interplay of twist and strain in bilayer graphene enables the formation of moir\'e patterns and narrow bands that host correlated and topological phases. While magic-angle twisted bilayer graphene has been widely studied, strain…
Two-dimensional Janus transition metal dichalcogenides (TMDs) have attracted attention due to their emergent properties arising from broken mirror symmetry and self-driven polarisation fields. While it has been proposed that their vdW…
Recent interest in very thin single phase Ga1-xMnxN dilute magnetic layers increased needs for precise, non-destructive, and relatively fast characterization methods with key issues being the macroscopic lateral Mn distribution and the…
The experimental observations of many interaction-driven electronic phases in moir\'e superlattices have stimulated intense theoretical and experimental efforts to understand and engineer these correlated physics. Strain is a powerful tool…
Understanding the atomic-scale mechanisms governing metal-mediated nucleation and growth of gallium nitride (GaN) and related alloys is critical for tailoring their structural and functional properties in advanced electronic,…
Low dimensional systems, nanowires, in particular, have exhibited excellent optical and electronic properties. Understanding the thermal properties in semiconductor nanowires is very important for their applications in their electronic…
As the characteristic dimensions of modern top-down devices are getting smaller, such devices reach their operational limits given by quantum mechanics. Thus, two-dimensional (2D) structures appear as one of the best solutions to meet the…
Evaluation of residual elastic strain within the bulk of engineering components or natural objects is a challenging task, since in general it requires mapping a six-component tensor quantity in three dimensions. A further challenge concerns…
The surface dynamics and thermodynamics of metal nanowires are investigated in a continuum model. Competition between surface tension and electron-shell effects leads to a rich stability diagram, with fingers of stability extending to…
Growth of catalyst-free AlxGa1-xN (0.15<x<0.50)/GaN nanowires by plasma assisted molecular beam epitaxy is thoroughly structural and chemical analyzed by using transmission electron microscopy related techniques. We found that well-defined…
Unique intensity features arising from dynamical diffraction arise in coherent x-ray nanobeam diffraction patterns of crystals having thicknesses larger than the x-ray extinction depth or exhibiting combinations of nanoscale and mesoscale…
We demonstrate an all-epitaxial and scalable growth approach to fabricate single-crystalline GaN nanowires on graphene by plasma-assisted molecular beam epitaxy. As substrate, we explore several types of epitaxial graphene layer structures…
Here we use large-scale molecular dynamics (MD) simulations of the high-rate deformation of nanocrystalline tantalum to investigate the processes associated with plastic deformation for strains up to 100%. We use initial atomic…
One of the ways to use graphene in field effect transistors is to introduce a band gap by quantum confinement effect [1]. That is why narrow graphene nanoribbons (GNRs) with width less than 50nm are considered to be essential components in…
Most III-nitride semiconductors are grown on non-lattice-matched substrates like sapphire or silicon due to the extreme difficulty of obtaining a native GaN substrate. We show that several layered transition-metal dichalcogenides are…
A novel method for controlling nanowire magnetic properties and growth from filling time profile is presented. The wires are grown with an electrodeposition method ("Template synthesis") with a wide selection of pore diameters. We show that…
We report on the growth of axial InAs-on-GaAs nanowire heterostructures on silicon by molecular beam epitaxy using 20 nm diameter Au catalysts. First, the growth parameters of the GaAs nanowire segment were optimized to achieve a pure…
The local deformation of two-dimensional Lennard-Jones glasses under imposed shear strain is studied via computer simulations. Both the mean squared displacement and mean squared strain rise linearly with the length of the strain interval…
Here we report on non-uniform shell growth of In(x)Ga(1-x)As onto GaAs nanowire (NW) core by molecular beam epitaxy (MBE). The growth was realized on pre-patterned silicon substrates with pitch size (p) ranging from 0.1 um to 10 um.…
A method for inducing nonuniform strain in graphene films is developed. Pillars made of a dielectric material (electron beam resist) are placed between graphene and the substrate, and graphene sections between pillars are attached to the…