Related papers: YAG nano-light sources with high Ce concentration
The comprehensive research of the electronic structure, thermodynamic and electrical transport properties reveals the existence of inhomogeneous superconductivity due to structural disorder in Ca$_3$Rh$_4$Sn$_{13}$ doped with La…
We propose a new approach to theoretical description of doped cuprate like $La_{2-x}Sr_{x}CuO_4$ and $YBa_2Cu_3O_{6+x}$, assuming phase separation and treating it as inhomogeneous composite material, containing the dielectric and metallic…
A complex studies of optoelectronics, non-linear optical and laser stimulated piezoelectric features of chalcogenide powder-like chalcogenide crystals pure and rare earth doped AgGaGe3 Se8 crystallites are presented. It is shown principal…
Dilute arrays of GaAs/AlGaAs modulation-doped quantum dots (QDs) fabricated by electron-beam lithography and low impact reactive-ion etching exhibit highly homogeneous luminescence. Single quantum dots display spectral emission with peak…
Acene molecules (anthracene, tetracene, pentacene) and fullerene (C$_{60}$) are embedded in He nanodroplets (He$_N$) and probed by EUV synchrotron radiation. When resonantly exciting the He nanodroplets, the embedded molecules M are…
Herein, we report on the improvement of structural quality and enhancement of photoluminescence (PL) emission for an optimally N doped nanocrystalline diamond (NCD) film. Pure and N doped nanocrystalline diamond films are synthesized on Si…
Mn-doped GaAs nanowires were grown in the self-catalytic growth mode on oxidized Si(100) surface by molecular beam epitaxy and characterized by scanning and transmission electron microscopy, Raman scattering, photoluminescence,…
The development of color centers in diamond as the basis for emerging quantum technologies has been limited by the need for ion implantation to create the appropriate defects. We present a versatile method to dope diamond without ion…
Superconductivity in ultra-doped $Si_{1-x}Ge_{x}:B$ epilayers is demonstrated by nanosecond laser doping, which allows introducing substitutional B concentrations well above the solubility limit and up to $7\,at.\%$. A Ge fraction $x$…
Two sets of MgB2 samples doped with up to 5 at. % of Al were prepared in different laboratories using different procedures. Decreases in the a and c lattice parameters were observed with Al doping confirming Al substitution onto the Mg…
We report that Ce doping was achieved in La2CuO4 with the K2NiF4 (T) structure for the first time by molecular beam epitaxy. A synthesis temperature of as low as ~ 630C and an appropriate substrate choice, i.e., (001)LaSrGaO4 (a \~ 3.843…
We addressed the inconsistency between the electron mass anisotropy ratios determined by the far-infrared experiments and DC conductivity measurements. By eliminating possible sources of error and increasing the sensitivity and resolution…
An experimental approach is presented that allows for the incorporation of large mass/charge selected ions in liquid helium droplets. It is demonstrated that droplets can be efficiently doped with a mass/charge selected amino acid as well…
We report the synthesis and characterization of graphite (C) doped MgB2-xCx (x = 0.0, 0.1, 0.2 and 0.3) samples. The crystal structure and microstructural characterization have been investigated by x-ray diffractometer and transmission…
In this letter, we have investigated the third-order optical nonlinearities of high-quality Ni doped ZnO nanorods crystallized in wurtzite lattice, prepared by the wet chemical method. In our experiments, we found that the two photon…
Developing efficient Er3+,Yb3+:YAG eye-safe lasers is a priority of modern laser technology. This paper focuses on the influence of the concentration of Yb3+ ions on the spectroscopic properties of Er3+,Yb3+:YAG transparent ceramics. Four…
In this study, we report the enhancement in field emission (FE) properties of ZnO nanostructure by Ni doping at the base pressure of ~1 x 10-8 mbar, which were grown by the simple wet chemical process. ZnO nanostructure shows single…
This study presents investigations of Yb-doped $\beta$-Ga$_2$O$_3$, an ultrawide bandgap semiconductor with potential use in future power and optoelectronic devices operating in high-radiation environments. The research has focused on the…
We have studied the 1.5 $\mu$m photoluminescence (PL) from Er ions after annealing two different sample sets in the temperature range 500 °C to 1100 °C. The different sample sets were made by magnetron sputtering from composite…
We report the effect of germanium as n-type dopant on the electrical and optical properties of AlxGa1-xN layers grown by plasma assisted molecular-beam epitaxy. The Al content has been varied from x = 0 to 0.66, confirmed by Rutherford…