Related papers: Thickness-induced violation of de Haas-van Alphen …
When electrons are confined in two dimensions and subjected to strong magnetic fields, the Coulomb interactions between them become dominant and can lead to novel states of matter such as fractional quantum Hall liquids. In these liquids…
We report on magneto-transport measurements of a two-dimensional electron gas confined in a Cd$_{0.997}$Mn$_{0.003}$Te quantum well structure under conditions of vanishing Zeeman energy. The electron Zeeman energy has been tuned via the…
We report an experimental study of quantum point contacts defined in a high-quality strained germanium quantum well with layered electric gates. At zero magnetic field, we observe quantized conductance plateaus in units of 2$e^2/h$.…
The fractional quantum Hall (FQH) effect arises from strong electron correlations in a quantising magnetic field, and features exotic emergent phenomena such as electron fractionalisation. Using the diagrammatic Monte Carlo approach with…
Transport properties of highly mobile 2D electrons are studied in symmetric GaAs quantum wells placed in titled magnetic fields. Quantum positive magnetoresistance (QPMR) is observed in magnetic fields perpendicular to the 2D layer.…
Semiconductor interfaces, such as these existing in multilayer structures (e.g., quantum wells (QWs)), are interesting because of their ability to form 2D electron gases (2DEGs), in which charge carriers behave completely differently than…
The de Haas-van Alphen effect (dHvAe) describes the periodic oscillation of the magnetisation in a material as a function of inverse applied magnetic field. It forms the basis of a well established procedure for measuring Fermi surface…
We numerically study a 5/2 fractional quantum Hall system with even number of electrons using the exact diagonalization where both the strong Landau level (LL) mixing and a finite width of the quantum well have been considered and adapted…
The fractional quantum Hall effect (FQHE) stands as a quintessential manifestation of an interacting two-dimensional electron system. One of FQHE's most fundamental characteristics is the energy gap separating the incompressible ground…
The results of experimental study of interference induced magnetoconductivity in narrow HgTe quantum wells of hole-type conductivity with a normal energy spectrum are presented. Interpretation of the data is performed with taking into…
When an electron is confined to a triangular atomic thick layer of graphene [1-5] with zig-zag edges, its energy spectrum collapses to a shell of degenerate states at the Fermi level (Dirac point) [6-9]. The degeneracy is proportional to…
We apply the diagram-technique formalism beyond the Hartree-Fock approximation to a two-dimensional nearly ideal electron gas in a weak perpendicular magnetic field. The case of an almost completely filled upper Landau level (filling factor…
Quantized Hall conductance and de Haas van Alphen (dHvA) oscillation are studied theoretically in the tight-binding model for (TMTSF)$_2$NO$_3$, in which there are small pockets of electron and hole due to the periodic potentials of anion…
A clear signature of Zeeman split states crossing is observed in Landau fan diagram of strained germanium two-dimensional hole gas. The underlying mechanisms are discussed based on a perturbative model yielding a closed formula for the…
We investigated the behavior of fractional quantum Hall (FQH) states in a two-dimensional electron system with layer thickness and an in-plane magnetic field. Our comparisons across various filling factors within the first Landau level…
The piecewise linearity condition on the total energy with respect to the total magnetization of finite quantum systems is derived, using the infinite-separation-limit technique. This generalizes the well-known constancy condition, related…
The kinetic energy of electrons in a magnetic field is quenched resulting in a discrete set of highly degenerate Landau levels (LL) which gives rise to fascinating phenomena like the de Haas-van Alphen effect (dHvAe) or the integer and…
Trilayer graphene in the fractional Quantum Hall Effect regime displays a set of unique interaction-induced transitions that can be tuned entirely by the applied bias voltage. These transitions occur near the anti-crossing points of two…
We construct an effective Hamiltonian for electrons in the fractional quantum Hall regime for GaAs and graphene that takes into account Landau level mixing (for both GaAs and graphene) and subband mixing (for GaAs, due to the nonzero width…
We study the Fermi level structure of (2+1)-dimensional strongly interacting electron systems in external magnetic field using the AdS/CFT correspondence. The gravity dual of a finite density fermion system is a Dirac field in the…