Related papers: DSTT-MRAM: Differential Spin Hall MRAM for On-chip…

Analog memory is of great importance in neurocomputing technologies field, but still remains difficult to implement. With emergence of memristors in VLSI technologies the idea of designing scalable analog data storage elements finds its…

Voltage-gate assisted spin-orbit torque (VGSOT) writing scheme combines the advantages from voltage control of magnetic anisotropy (VCMA) and spin-orbit torque (SOT) effects, enabling multiple benefits for magnetic random access memory…

Reliable operation of perpendicular spin-transfer-torque magnetic random-access memory (p-STT-MRAM) requires control of magnetic alignment within the synthetic antiferromagnet (SAF) reference layer. At nanopillar dimensions, however,…

Spin-Transfer Torque Magnetic RAM (STT-MRAM) is known as the most promising replacement for SRAM technology in large Last-Level Caches (LLCs). Despite its high-density, non-volatility, near-zero leakage power, and immunity to radiation as…

Conventional 6T SRAM is used in microprocessors in the cache memory design. The basic 6T SRAM cell and a 6 bit memory array layout are designed in LEdit. The design and analysis of key SRAM components, sense amplifiers, decoders, write…

Recent research has indicated that introducing impurities that increase the resistivity of Pt can enhance the efficiency of the spin Hall torque it generates. Here we directly demonstrate the usefulness of this strategy by fabricating…

Spin Transfer Torque MRAMs are attractive due to their non-volatility, high density and zero leakage. However, STT-MRAMs suffer from poor reliability due to shared read and write paths. Additionally, conflicting requirements for data…

One essential feature in MRAM cells is the spin torque efficiency, which describes the ratio of the critical switching current to the energy barrier. Within this paper it is reported that the spin torque efficiency can be improved by a…

As an emerging post-CMOS Field Effect Transistor, Magneto-Electric FETs (MEFETs) offer compelling design characteristics for logic and memory applications, such as high-speed switching, low power consumption, and non-volatility. In this…

Last level caches (LLCs) occupy a large chip-area and there size is expected to grow further to offset the limitations of memory bandwidth and speed. Due to high leakage consumption of SRAM device, caches designed with SRAM consume large…

Deep Neural Networks (DNNs) have been established as the state-of-the-art algorithm for advanced machine learning applications. Recently, CapsuleNets have improved the generalization ability, as compared to DNNs, due to their…

The realistic modeling of STT-MRAM for the simulations of hybrid CMOS/Spintronics devices in comprehensive simulation environments require a full description of stochastic switching processes in state of the art STT-MRAM. Here, we derive an…

The electrical switching of antiferromagnet (AFM) is very important for the development of ultrafast magnetic random-access memory (MRAM). This task becomes more difficult in antiferromagnetic oxide NiO which has complex anisotropy. We show…

Large-scale integration of emerging nanoscale non-volatile memory devices, e.g. resistive random-access memory (RRAM), can enable a new generation of neuromorphic computers that can solve a wide range of machine learning problems. Such…

Much research has shown that applications have variable runtime cache requirements. In the context of the increasingly popular Spin-Transfer Torque RAM (STT-RAM) cache, the retention time, which defines how long the cache can retain a cache…

The memory demands of large-scale deep neural networks (DNNs) require synaptic weight values to be stored and updated in off-chip memory like dynamic random-access memory, which reduces energy efficiency and increases training time.…

Embedded machine learning (ML) systems have now become the dominant platform for deploying ML serving tasks and are projected to become of equal importance for training ML models. With this comes the challenge of overall efficient…

Content addressable memory is popular in intelligent computing systems as it allows parallel content-searching in memory. Emerging CAMs show a promising increase in bitcell density and a decrease in power consumption than pure CMOS…

The possible use of spin and magnets in place of charge and capacitors to store and process information is well known. Magnetic tunnel junctions are being widely investigated and developed for magnetic random access memories. These are two…

The discovery of spin torque transfer (STT) has lead to a significant advance in the development of spintronic devices. Novel structures and materials have been studied in order to improve the performance of the magnetic tunnel junctions…