Related papers: Anomalous resistance overshoot in the integer quan…
Physical properties of anisotropic compressible quantum Hall states and their implications to integer quantum Hall effect are studied based on a mean field theory on the von Neumann lattice. It is found that the Hall gas has unusual…
The transport properties of the two-dimensional system in HgTe-based quantum wells containing simultaneously electrons and holes of low densities are examined. The Hall resistance, as a function of perpendicular magnetic field, reveals an…
The integer quantum Hall effect is analysed using a transport mechanism with a semi-classic wave packages of electrons in this paper. A strong magnetic field perpendicular to a slab separates the electron current into two branches with…
Evidence of the Ettingshausen effect in the breakdown regime of the integer quantum Hall effect has been observed in a GaAs/AlGaAs two-dimensional electron system. Resistance of micro Hall bars attached to both edges of a current channel…
The quantum Hall effect is investigated in a high-mobility two-dimensional electron gas on the surface of a cylinder. The novel topology leads to a spatially varying filling factor along the current path. The resulting inhomogeneous…
The scaling of anomalous Hall resistivity on the longitudinal resistivity has been intensively studied in the different magnetic systems, including multilayers and granular films, to examine which mechanism, skew scattering or side-jump,…
The Hall effect, the anomalous Hall effect and the spin Hall effect are fundamental transport processes in solids arising from the Lorentz force and the spin-orbit coupling respectively. The quantum versions of the Hall effect and the spin…
To fully appreciate the impacts that the discovery of the quantum Hall effect had on electrical metrology, it may benefit the reader to cultivate a general understanding of the phenomenon. Two-dimensional electron systems can exhibit many…
The object of the present work is to study the quantum Hall effect through its symmetries and topological aspects. We consider the model of an electron moving in a two-dimensional lattice in the presence of applied in-plain electric field…
We summarize the screening theory of the integer quantized Hall effect (IQHE) and emphasize its two key mechanisms: first, the existence, in certain magnetic field intervals, of incompressible strips, with integer values of the local…
We study the plateaux of the integer quantum Hall resistance in a bilayer electron system in tilted magnetic fields. In a narrow range of tilt angles and at certain magnetic fields, the plateau level deviates appreciably from the quantized…
The quantum Hall effect emerges when two-dimensional samples are subjected to strong magnetic fields at low temperatures: Topologically protected edge states cause a quantized Hall conductivity in multiples of $e^2/h$. Here we show that the…
The quantum anomalous Hall effect refers to the quantization of Hall effect in the absence of applied magnetic field. The quantum anomalous Hall effect is of topological nature and well suited for field-free resistance metrology and…
A key step towards dissipationless transport devices is the quantum anomalous Hall effect, which is characterized by an integer quantized Hall conductance in a ferromagnetic insulator with strong spin-orbit coupling. In this work, the…
Low frequency AC-measurements are commonly used to determine the voltage and currents through mesoscopic devices. We calculate the effect of the alternating Hall voltage on the recorded time-averaged voltage in the presence of a top-gate…
Quantum electron transport in side-gated graphene Hall bars is investigated in the presence of quantizing external magnetic fields. The asymmetric potential of four side-gates distorts the otherwise flat bands of the relativistic Landau…
An asymmetric break-down of the integer quantized Hall effect is investigated. This rectification effect is observed as a function of the current value and its direction in conjunction with an asymmetric lateral confinement potential…
The nature of a metal--insulator transition tuned by external gates in quantum Hall (QH) systems with point constrictions at integer bulk filling, as reported in recent experiments of Roddaro et al. [1], is addressed. We are particularly…
We measure the low-field Hall resistivity of a magnetically-doped two-dimensional electron gas as a function of temperature and electrically-gated carrier density. Comparing these results with the carrier density extracted from Shubnikov-de…
I review some aspects of an alternative model of the quantum Hall effect, which is not based on the presence of disorder potentials. Instead, a quantization of the electronic drift current in the presence of crossed electric and magnetic…