Related papers: Modulation Coding for Flash Memories
The current flash memory technology focuses on the cost minimization of its static storage capacity. However, the resulting approach supports a relatively small number of program-erase cycles. This technology is effective for consumer…
Flash memory is a non-volatile computer memory comprised of blocks of cells, wherein each cell is implemented as either NAND or NOR floating gate. NAND flash is currently the most widely used type of flash memory. In a NAND flash memory,…
Recently, flash memories have become a competitive solution for mass storage. The flash memories have rather different properties compared with the rotary hard drives. That is, the writing of flash memories is constrained, and flash…
In this paper, we consider modulation codes for practical multilevel flash memory storage systems with cell levels. Instead of maximizing the lifetime of the device [Ajiang-isit07-01, Ajiang-isit07-02, Yaakobi_verdy_siegel_wolf_allerton08,…
The most important challenge in the scaling down of flash memory is its increased inter-cell interference (ICI). If side information about ICI is known to the encoder, the flash memory channel can be viewed as similar to Costa's "writing on…
In data storage and data transmission, certain patterns are more likely to be subject to error when written (transmitted) onto the media. In magnetic recording systems with binary data and bipolar non-return-to-zero signaling, patterns that…
This paper summarizes our work on experimentally analyzing, exploiting, and addressing vulnerabilities in multi-level cell NAND flash memory programming, which was published in the industrial session of HPCA 2017, and examines the work's…
We consider the local rank-modulation scheme in which a sliding window going over a sequence of real-valued variables induces a sequence of permutations. Local rank-modulation is a generalization of the rank-modulation scheme, which has…
In this work, we study a recently proposed direct shaping code for flash memory. This rate-1 code is designed to reduce the wear for SLC (one bit per cell) flash by minimizing the average fraction of programmed cells when storing structured…
The memory consistency model is a fundamental system property characterizing a multiprocessor. The relative merits of strict versus relaxed memory models have been widely debated in terms of their impact on performance, hardware complexity…
The growing penetration of renewable and distributed generation is transforming power systems and challenging conventional protection schemes that rely on fixed settings and local measurements. Machine learning (ML) offers a data-driven…
Flash memory is well-known for its inherent asymmetry: the flash-cell charge levels are easy to increase but are hard to decrease. In a general rewriting model, the stored data changes its value with certain patterns. The patterns of data…
Rank modulation has been recently proposed as a scheme for storing information in flash memories. While rank modulation has advantages in improving write speed and endurance, the current encoding approach is based on the "push to the top"…
The read channel of a Flash memory cell degrades after repetitive program and erase (P/E) operations. This degradation is often modeled as a function of the number of P/E cycles. In contrast, this paper models the degradation as a function…
In cloud computing, storage area networks, remote backup storage, and similar settings, stored data is modified with updates from new versions. Representing information and modifying the representation are both expensive. Therefore it is…
This chapter deals with the topic of designing reliable and efficient codes for the storage and retrieval of large quantities of data over storage devices that are prone to failure. For long, the traditional objective has been one of…
In this work, we study the performance of different decoding schemes for multilevel flash memories where each page in every block is encoded independently. We focus on the multi-level cell (MLC) flash memory, which is modeled as a two-user…
NAND flash memory is ubiquitous in everyday life today because its capacity has continuously increased and cost has continuously decreased over decades. This positive growth is a result of two key trends: (1) effective process technology…
Codes for rank modulation have been recently proposed as a means of protecting flash memory devices from errors. We study basic coding theoretic problems for such codes, representing them as subsets of the set of permutations of $n$…
Memorization in large language models poses critical risks for privacy and fairness as these systems scale to billions of parameters. While previous studies established correlations between memorization and factors like token frequency and…