Related papers: Resonant valley filtering of massive Dirac electro…
Valley-based electronics, known as valleytronics, is one of the keys to break through to a new stage of electronics. The valley degree of freedom is ubiquitous in the honeycomb lattice system. The honeycomb lattice structure of silicon…
Lateral superlattices have attracted major interest as this may allow one to modify spectra of two dimensional electron systems and, ultimately, create materials with tailored electronic properties. Previously, it proved difficult to…
Valley pseudospin, a new degree of freedom in photonic lattices, provides an intriguing way to manipulate photons and enhance the robustness of optical networks. Here we experimentally demonstrated topological waveguiding, refracting,…
Conventional electronics are based invariably on the intrinsic degrees of freedom of an electron, namely, its charge and spin. The exploration of novel electronic degrees of freedom has important implications in both basic quantum physics…
Valley-polarized currents can be generated by local straining of multi-terminal graphene devices. The pseudo-magnetic field created by the deformation allows electrons from only one valley to transmit and a current of electrons from a…
A new class of multilayered functional materials has recently emerged in which the component atomic layers are held together by weak van der Waals forces that preserve the structural integrity and physical properties of each layer. An…
We start with the silicene or germanene single-particle Hamiltonian in buckled 2D hexagonal lattices expressed in terms of Dirac matrices in the Weyl basis. The Hamiltonian of these systems comprises of the Dirac kinetic energy, a mass gap…
We explore the gapped graphene structure in the two-dimensional plane in the presence of the Rosen-Morse potential and an external uniform magnetic field. In order to describe the corresponding structure, we consider the propagation of…
We show analytically that the ability of Dirac materials to localize an electron in both a barrier and a well can be utilized to open a pseudo-gap in graphene's spectrum. By using narrow top-gates as guiding potentials, we demonstrate that…
Superlattices are artificial periodic nanostructures which can control the flow of electrons. Their operation typically relies on the periodic modulation of the electric potential in the direction of electron wave propagation. Here we…
Valleytronics using two-dimensional materials opens unprecedented opportunities for information processing with the valley polarizer being a basic building block. Paradigms such as strain engineering, the inclusion of line defects, and the…
Charge carriers in Dirac/Weyl semimetals with tilted anisotropic energy dispersion exhibit valley-dependent refraction and reflection at electrostatic barrier interfaces. Here, we show that an angled barrier interface provides a purely…
Graphene on hexagonal boron nitride (hBN) can exhibit a topological phase via mutual crystallographic alignment. Recent measurements of nonlocal resistance ($R_{nl}$) near the secondary Dirac point (SDP) in ballistic graphene/hBN…
Spin-1/2 particles such as the electron are described by the Dirac equation, which allows for two spin eigenvalues (up or down) and two types of energy eigenvalues (positive or negative, corresponding to the electron and the positron). A…
We study the tunneling of chiral electrons in graphene through a region where the electronic spectrum changes from the usual linear dispersion to a hyperbolic dispersion, due to the presence of a gap. It is shown that contrary to the…
The honeycomb lattice sets the basic arena for numerous ideas to implement electronic, photonic, or phononic topological bands in (meta-)materials. Novel opportunities to manipulate Dirac electrons in graphene through band engineering arise…
For potential barriers with scalar and vector coupling, we show that a Dirac particle could experience nearly full transmission within a wide sub-barrier energy band. Moreover, for certain potential configurations, including pseudo-spin…
We calculate the tunneling process of a Dirac particle across two square barriers separated a distance $d$, as well as the scattering by a double cusp barrier where the centers of the cusps are separated a distance larger than their…
We study the effect of the strain on the band structure and the valley-dependent transport property of graphene heterojunctions. It is found that valley-dependent separation of electrons can be achieved by utilizing the strain and on-site…
Strain engineering of graphene takes advantage of one of the most dramatic responses of Dirac electrons enabling their manipulation via strain-induced pseudo-magnetic fields. Numerous theoretically proposed devices, such as resonant…