Related papers: Reverse epitaxy of Ge: ordered and facetted surfac…
Germanium (Ge), the next-in-line group-IV material, bears great potential to add functionality and performance to next-generation nanoelectronics and solid-state quantum transport based on silicon (Si) technology. Here, we investigate the…
The formation of nanostructures during metalorganic vapor-phase epitaxy on patterned (001)/(111)B GaAs substrates is reviewed. The focus of this review is on the seminal experiments that revealed the key kinetic processes during…
The article presents an experimental study of an issue of whether the formation of arrays of Ge quantum dots on the Si(001) surface is an equilibrium process or it is kinetically controlled. We deposited Ge on Si(001) at the room…
We show that the ion beam induced incompressible amorphous solid flow in terms of advection transport mechanism leads to the erosion and deposition of atoms at the amorphous/crystalline (a/c) interface resulting in the formation of pattern…
The formation of three-dimensional structures during the epitaxial growth of films is associated to the reflection of diffusing particles in descending terraces due to the presence of the so-called Ehrlich-Schwoebel (ES) barrier. We…
Site-controlled quantum dots formed during the deposition of (Al)GaAs layers by metalorganic vapor-phase epitaxy on GaAs(111)B substrates patterned with inverted pyramids result in geometric and compositional self-ordering along the…
Geometrically decorated two-dimensional (2D) discrete surfaces can be more effective than conventional smooth reflectors in managing wave radiation. Constructive non-specular wave scattering permits the scattering angle to be other than…
IV-VI diluted magnetic semiconductor Ge1-xCrxTe layers up to x=0.1 were grown on SrF2 substrates by molecular beam epitaxy. In site reflection high-energy electron diffraction shows a streaky pattern with sixfold symmetry in the plane for…
Self-assembled Ge islands were grown on stripe-patterned Si (001) substrates by solid source molecular beam epitaxy. The surface morphology obtained by atomic force microscopy (AFM) and cross-sectional transmission electron microscopy…
Reflection and refraction occur at interface between two different media. These two fundamental phenomena form the basis of fabricating various wave components. Specifically, refraction, dubbed positive refraction nowadays, appears in the…
The off-normal ion irradiation of semiconductor materials is seen to induce nanopatterning effects. Different theories are proposed to explain the mechanisms that drive self-reorganization of amorphisable surfaces. One of the prominent…
Images of uniform and upright nanowires are fascinating, but often, they are quite puzzling, when epitaxial templating from the substrate is clearly absent. Here, we reveal the physics underlying one such hidden growth guidance mechanism…
We present models of surfaces of crystals in an environment where molecular beam epitaxy (MBE) and related methods of crystal growth like atomic layer epitaxy (ALE) can be performed. Besides detailed models of reconstructed (001) surfaces…
We report direct imaging of standing waves of the nontrivial surface states of topological insulator Bi$_2$Te$_3$ by using a low temperature scanning tunneling microscope. The interference fringes are caused by the scattering of the…
Epitaxial films which contains more than one crystallographic orientation are of interest due to the possibility of altered magnetic, electrical, and optical properties. Thin films of FeSe have been grown on single-crystal MgO substrates…
During epitaxial crystal growth a pattern that has initially been imprinted on a surface approximately reproduces itself after the deposition of an integer number of monolayers. Computer simulations of the one-dimensional case show that the…
Full pattern Le-Bail refinement using x-ray powder diffraction profiles of Sr1-xCaxTiO3 for x=0.02, 0.04 in the temperature range 12 to 300 K reveals anomalies in the unit cell parameters at 170, 225 K due to an antiferrodistortive (cubic…
We observe a thermally induced spontaneous magnetization reversal of epitaxial ferromagnet/antiferromagnet heterostructures under a constant applied magnetic field. Unlike any other magnetic system, the magnetization spontaneously reverses,…
A solid-on-solid model of epitaxial growth in 1+1 dimensions is investigated in which slope dependent upward and downward particle currents compete on the surface. The microscopic mechanisms which give rise to these currents are the…
Irradiation of cuprate high-$T_c$ superconductors with light ions of moderate energy creates point defects that lead to a reduction or full suppression of the critical temperature. By shaping the ion flux with a stencil mask, nanostructures…