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Related papers: Nonvolatile Memory Cells Based on MoS2/Graphene He…

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Using density functional theory, the electronic structures of single walled molybdenum disulfide nanotubes (MoS$_2$ NTs) were investigated as a function of diameter. Our calculations show that the electronic structure near the band gap is…

Materials Science · Physics 2021-05-12 Kaoru Hisama , Mina Maruyama , Shohei Chiashi , Shigeo Maruyama , Susumu Okada

The discovery of interfacial ferroelectricity in two-dimensional rhombohedral (3R)-stacked semiconductors opens up a new pathway for achieving ultrathin computing-in-memory devices. However, exploring ferroelectricity switching in natural…

Reconfigurable memristors featuring neural and synaptic functions hold great potential for neuromorphic circuits by simplifying system architecture, cutting power consumption, and boosting computational efficiency. Their additive…

Interface engineering of organic-inorganic halide perovskite solar cells (PSCs) plays a pivotal role in achieving high power conversion efficiency (PCE). Graphene and related two-dimensional materials (GRMs) are promising candidates to tune…

Molybdenum disulfide (MoS$_2$) is a promising candidate for 2D nanoelectronic devices, that shows a direct band-gap for monolayer structure. In this work we study the electronic structure of MoS$_2$ upon both compressive and tensile strains…

Materials Science · Physics 2016-05-03 Miquel López-Suárez , Igor Neri , Riccardo Rurali

We describe here recent work on the electronic properties, magnetoexcitons and valley polarised electron gas in 2D crystals. Among 2D crystals, monolayer $MoS_2$ has attracted significant attention as a direct-gap 2D semiconductor analogue…

Mesoscale and Nanoscale Physics · Physics 2018-10-31 Ludmila Szulakowska , Maciej Bieniek , Pawel Hawrylak

We report on the transport and low-frequency noise measurements of MoS2 thin-film transistors with "thin" (2-3 atomic layers) and "thick" (15-18 atomic layers) channels. The back-gated transistors made with the relatively thick MoS2…

Mesoscale and Nanoscale Physics · Physics 2023-07-19 S. L. Rumyantsev , C. Jiang , R. Samnakay , M. S. Shur , A. A. Balandin

We propose a robust photonic platform for encapsulation and addressing of optically active 2D- and nano-materials. Our implementation utilises a monolayer of MoS$_2$ transition metal dichalcogenide embedded in an elastomeric waveguide chip.…

Twisted heterostructures of two-dimensional crystals offer almost unlimited scope for the design of novel metamaterials. Here we demonstrate a room-temperature ferroelectric semiconductor that is assembled using mono- or few- layer MoS2.…

Hybrid systems of two-dimensional (2D) materials (such as graphene-family materials and 2D transition metal dichalcogenides) are attracting much attention due to their distinctive optoelectronic, thermal, mechanical, and chemical…

We fabricated the 1D nanoscrolled monolayer MoS2 (1L-MoS2) with superior characteristics from 1L-MoS2 film in a facile route, using a suitable organic solvent with optimum surface tension, evaporation rate and dielectric constant, which…

Materials Science · Physics 2024-02-22 C. Abinash Bhuyan , Kishore K. Madapu , K. Prabakar , K. Ganesan , A. Pandian , Sandip Dhara

Planar electrodes patterned on a ferroelectric substrate are shown to provide lateral control of the conductive state of a two-terminal graphene stripe. A multi-level and on-demand memory control of the graphene resistance state is…

Materials Science · Physics 2015-11-17 V. Iurchuk , H. Majjad , F. Chevrier , D. Kundys , B. Leconte , B. Doudin , B. Kundys

Resistive memory based on 2D WS2, MoS2, and h-BN materials has been studied, including experiments and simulations. The influences with different active layer thicknesses have been discussed, including experiments and simulations. The…

Materials Science · Physics 2023-10-03 Ying-Chuan Chen , Yu-Ting Chao , Edward Chen , Chao-Hsin Wu , Yuh-Renn Wu

Single-layer MoS2 is an attractive semiconducting analogue of graphene that combines high mechanical flexibility with a large direct bandgap of 1.8 eV. On the other hand, bulk MoS2 is an indirect bandgap semiconductor similar to silicon,…

Monolayer two-dimensional transitional metal dichalcogenides, such as MoS2, WS2 and WSe2, are direct band gap semiconductors with large exciton binding energy. They attract growing attentions for opto-electronic applications including solar…

Mesoscale and Nanoscale Physics · Physics 2017-10-05 Shoujun Zheng , Jinkyu So , Fucai Liu , Zheng Liu , Nikolay Zheludev , Hong Jin Fan

Molybdenum disulfide, $MoS_2$, is a next-generation semiconductor and is frequently integrated into emergent optoelectronic technologies based on two-dimensional materials. Here, we present a method that provides direct optical feedback on…

Two-dimensional van der Waals heterostructures are potential game changers both in understanding the fundamental physics and in the realization of various devices that exploit magnetism at the nanoscale. Multiferroic heterostructures…

Materials Science · Physics 2024-12-12 Himangshu Sekhar Sarma , Subhradip Ghosh

Magnesium hydroxide (Mg(OH)2) has a layered brucite-like structure in its bulk form and was recently isolated as a new member of 2D monolayer materials. We investigated the electronic and optical properties of monolayer crystals of Mg(OH)2…

Mesoscale and Nanoscale Physics · Physics 2016-11-09 M. Yagmurcukardes , E. Torun , R. T. Senger , F. M. Peeters , H. Sahin

Despite the weak nature of interlayer forces in transition metal dichalcogenide (TMD) materials, their properties are highly dependent on the number of layers in the few-layer two-dimensional (2D) limit. Here, we present a combined scanning…

We compute the electronic structure of two-dimensional (2D) materials decorated with self-assembled organic monolayers using density functional theory. We find that 2D materials are strongly impacted by near-field electrostatic effects…

Materials Science · Physics 2021-09-22 Qunfei Zhou , Bukuru Anaclet , Trevor Steiner , Michele Kotiuga , Pierre Darancet
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