Related papers: One-Dimensional Quantum Confinement Effect Modulat…
Ability to understand and model the performance limits of nanowire transistors is the key to design of next generation devices. Here, we report studies on high-mobility junction-less gate-all-around nanowire field effect transistor with…
Thermal voltage noise measurements are performed in order to determine the electron temperature in nanopatterned channels of a GaAs/AlGaAs heterostructure at bath temperatures of 4.2 and 1.4 K. Two narrow two-dimensional (2D) heating…
We propose a mechanism for nanoscale energy conversion, an electric voltage induced by a temperature gradient in a junction composed of the same material having exactly the same geometric sizes, but distinct shapes. The proposed effect…
We measure the thermal conductivity ($\kappa$) of individual InAs nanowires (NWs), and find that it is 3 orders of magnitude smaller than the bulk value in the temperature range of 10 to 50 K. We argue that the low $\kappa$ arises from the…
Materials capable of highly efficient, direct thermal-to-electric energy conversion would have substantial economic potential. Theory predicts that thermoelectric efficiencies approaching the Carnot limit can be achieved at low temperatures…
Nano-structuring is an extremely promising path to high performance thermoelectrics. Favorable improvements in thermal conductivity are attainable in many material systems, and theoretical work points to large improvements in electronic…
We perform molecular dynamics simulations to investigate the reduction of the thermal conductivity by kinks in silicon nanowires. The reduction percentage can be as high as 70% at room temperature. The temperature dependence of the…
Low dimensional structures have demonstrated improved thermoelectric (TE) performance because of a drastic reduction in their thermal conductivity, {\kappa}l. This has been observed for a variety of materials, even for traditionally poor…
We report conductance and supercurrent of InAs nanowires coupled to Al-superconducting electrodes with short channel lengths and good Ohmic contacts. The nanowires are suspended 15\,nm above a local gate electrode. The charge density in the…
As a result of suppressed phonon conduction, large improvements of the thermoelectric figure of merit, ZT, have been recently reported for nanostructures compared to the raw materials' ZT values. It has also been suggested that low…
We report on magneto-transport measurements in InAs nanowires under large magnetic field (up to 55T), providing a direct spectroscopy of the 1D electronic band structure. Large modulations of the magneto-conductance mediated by an accurate…
This review focuses on the investigation and enhancement of the thermoelectric properties of semiconducting nanowires (NWs). NWs are nanostructures with typical diameters between few to hundreds of nm and length of few to several microns,…
Temperature-dependent I-V and C-V spectroscopy of single InAs nanowire field-effect transistors were utilized to directly shed light on the intrinsic electron transport properties as a function of nanowire radius. From C-V…
We calculate the thermoelectric power (or thermopower) of many semiconducting single wall carbon nanotubes (s-SWNTs) within a diameter range 0.5-1.5 nm by using the Boltzmann transport formalism combined with an extended tight-binding…
The thermal conductivity and thermoelectric power of a single carbon nanotube were measured using a microfabricated suspended device. The observed thermal conductivity is more than 3000 W/K m at room temperature, which is two orders of…
We performed measurements at helium temperatures of the electronic transport in an InAs quantum wire ($R_{wire} \sim 30$\,k$\Omega$) in the presence of a charged tip of an atomic force microscope serving as a mobile gate. The period and the…
We have measured magnetization M(T,H), electrical resistivity ro(T,H), thermal conductivity k(T,H), and thermopower S(T,H) of polycrystalline samples of Nd1-xEuxNiO3; 0 <= x <= 0.35; as a function of temperature and external magnetic field.…
We study arrays of parallel doped semiconductor nanowires in a temperature range where the electrons propagate through the nanowires by phonon assisted hops between localized states. By solving the Random Resistor Network problem, we…
Thermal properties have an outsized impact on efficiency and sensitivity of devices with nanoscale structures, such as in integrated electronic circuits. A number of thermal conductivity measurements for semiconductor nanostructures exist,…
We analyze the benefits and shortcomings of a thermal control in nanoscale electronic conductors by means of the contact heating scheme. Ideally, this straightforward approach allows one to apply a known thermal bias across nanostructures…