Related papers: Proximity effects in a topological-insulator/Mott-…
Topological insulators (TIs) have attracted immense interest because they host helical surface states. Protected by time-reversal symmetry, they are robust to non-magnetic disorder. When superconductivity is induced in these helical states,…
Topological insulators (TIs) are a new class of matter characterized by the unique electronic properties of an insulating bulk and metallic boundaries arising from non-trivial bulk band topology. While the surfaces of TIs have been well…
Exponentially localized surface states are the most distinctive property of a crystal with non-trivial band topology. Such surface states play a key role in characterizing topological insulators (TIs), both in theory and experiments. TIs…
Heterostructures between two-dimensional quantum spin Hall insulators (QSHI) and superconducting materials can allow for the presence of Majorana Fermions at their conducting edge states. Although a strong interface hybridization helps…
In this paper, we study the effects of attractive correlation on the topological insulator ($TI$) with topological flat-bands using an extended attractive Kane-Mele-Hubbard model (KMHM). In the KMHM, we found a quantum phase transition from…
The interplay between quantum interference, electron-electron interaction (EEI), and disorder is one of the central themes of condensed matter physics. Such interplay can cause high-order magnetoconductance (MC) corrections in…
We study the magnetic proximity effect on a two-dimensional topological insulator in a CrI$_3$/SnI$_3$/CrI$_3$ trilayer structure. From first-principles calculations, the BiI$_3$-type SnI$_3$ monolayer without spin-orbit coupling has Dirac…
The ferromagnet-topological insulator-ferromagnet (FM-TI-FM) junction exhibits thermal and electrical quantum Hall effects. The generated Hall voltage and transverse temperature gradient can be controlled by the directions of magnetizations…
We study in-gap electronic states induced by a nonmagnetic defect with short-range potential in two-dimensional topological insulators and trace their evolution as the distance between the defect and the boundary changes. The defect located…
We investigate the Kondo effect in the two-dimensional electron system with a non-trivial quadratic energy band crossing point. We show that the Kondo effect can induce a new hybrid topological insulator phase which is a coexistence state…
We investigate the effect of spatially correlated disorder on two-dimensional topological insulators and on the quantum spin Hall effect which the helical edge states in these systems give rise to. Our work expands the scope of previous…
Heterostructures of superconductors and quantum-Hall insulators are promising platforms of topological quantum computation. However, these two systems are incompatible in some aspects such as a strong magnetic field, the Meissner effect,…
We study the problem of designing an artificial Mott insulator in a correlated oxide heterostructure. We consider the extreme limit of quantum confinement based on ionic discontinuity doping, and argue that a unique dimer Mott insulator can…
Nontrivial topological superconductivity has received enormous research attentions due to its potential for diverse applications in topological quantum computing. The intrinsic issue concerning the correlation between a topological…
A topological Kondo insulator (TKI) is a strongly-correlated material, where hybridization between the conduction electrons and localized f-electrons gives rise to a crossover from a metallic behavior at high temperatures to a topologically…
We present a theory of the electron structure and the Zeeman effect for the helical edge states emerging in two-dimensional topological insulators based on HgTe/HgCdTe quantum wells with strong natural interface inversion asymmetry. The…
Topological insulators (TIs) are a class of materials which are insulating in their bulk form yet, upon introduction of an a boundary or edge, e.g. by abruptly terminating the material, may exhibit spontaneous current along their boundary.…
The 2D TI edge states are considered within the Volkov-Pankratov (VP) Hamiltonian. A smooth transition between TI and OI is assumed. The edge states are formed in the total gap of homogeneous 2D material. A pair of these states are of…
Topological insulators (TIs) are characterized by possessing metallic (gapless) surface states and a finite band-gap state in the bulk. As the thickness of a TI layer decreases down to a few nanometer, hybridization between the top and…
Numerical studies on Mott transitions caused by the control of the ratio between bandwidth and electron-electron interaction ($U$) are reported. By using the recently proposed path-integral renormalization group(PIRG) algorithm, physical…