Related papers: Spin Relaxation in Weak Localization Regime in Mul…
A semiclassical Monte Carlo approach is adopted to study the multivalley spin depolarization of drifting electrons in a doped n-type GaAs bulk semiconductor, in a wide range of lattice temperature ($40<T_L<300$ K) and doping density…
Low-temperature muon spin-lattice relaxation measurements in the non-Fermi-liquid heavy-fermion alloys UCu_{5-x}Pd_x, x = 1.0 and 1.5, indicate inhomogeneously distributed f-electron spin fluctuation rates, and exhibit a time-field scaling…
We measure the dissipation and frequency shift of a magnetically coupled cantilever in the vicinity of a silicon chip, down to $25$ mK. The dissipation and frequency shift originates from the interaction with the unpaired electrons,…
We present muon spin lattice relaxation measurements in the V15 spin 1/2 molecular nano-magnet. We find that the relaxation rate in low magnetic fields (<5 kG) is temperature independent below ~10 K, implying that the molecular spin is…
Strong magnetic field gradients can produce a synthetic spin-orbit interaction that allows for high fidelity electrical control of single electron spins. We investigate how a field gradient impacts the spin relaxation time T_1 by measuring…
Gradual localization of charge carriers was studied in a series of micro-size samples of monolayer graphene fabricated on the common large scale film and irradiated by different doses of C$^+$ ions with energy 35 keV. Measurements of the…
Based on a Monte Carlo method, we investigate the influence of transport conditions on the electron spin relaxation in GaAs. The decay of initial electron spin polarization is calculated as a function of distance under the presence of…
We present measurements of pure spin current absorption on lateral spin valves. By varying the width of the absorber we demonstrate that spin current absorption measurements enable to characterize efficiently the spin transport properties…
Weak antilocalization is studied in an InGaAs quantum well. Anomalous magnetoresistance is measured and described theoretically in fields perpendicular, tilted and parallel to the quantum well plane. Spin and phase relaxation times are…
Understanding spin relaxation in topological systems such as quantum spin-hall (QSH) insulator is critical for realizing coherent transport at high temperature. WTe$_{2}$, known as a QSH insulator with a high transition temperature of 100K,…
We consider the polarization function P^{exp}_Z(t) measured by the muon-spin relaxation (muSR) technique for the SrCr8Ga4O19 and ZnCu3(OH)6Cl2 spin-liquid systems. We show the functional form of P^{exp}_Z(t) to imply that, in the…
Energy dissipation via spin excitations is investigated for a hard ferromagnetic tip scanning a soft magnetic monolayer. We use the classical Heisenberg model with Landau-Lifshitz-Gilbert (LLG)-dynamics including a stochastic field…
Magnetic zigzag edges of graphene are considered as a basis for novel spintronics devices despite the fact that no true long-range magnetic order is possible in one dimension. We study the transverse and longitudinal fluctuations of…
Carrier relaxation processes have been investigated in GaAs/AlGaAs v-groove quantum wires (QWRs) with a large subband separation (46 meV). Signatures of inhibited carrier relaxation mechanisms are seen in temperature-dependent…
We demonstrate a high-yield fabrication of non-local spin valve devices with room-temperature spin lifetimes of up to 3 ns and spin relaxation lengths as long as 9 $\mu$m in platinum-based chemical vapor deposition (Pt-CVD) synthesized…
7Li NMR measurements were performed in the metallic spinel LiV2O4. The temperature dependencies of the line width, the Knight shift and the spin-lattice relaxation rate were investigated in the temperature range 30 mK < T < 280 K. For…
The relaxation time of weakly interacting classical spins is calculated by introducing the averages of the local dipolar field, obtained by thermodynamic perturbation theory, in a rigorous expression for the single-spin thermoactivation…
The transport of spin information has been studied in various materials, such as metals, semiconductors and graphene. In these materials, spin is transported by diffusion of conduction electrons. Here we study the diffusion and relaxation…
We report a surprisingly long spin relaxation time of electrons in Mn-doped p-GaAs. The spin relaxation time scales with the optical pumping and increases from 12 ns in the dark to 160 ns upon saturation. This behavior is associated with…
We measure the spin-lattice relaxation of donor bound electrons in ultrapure, isotopically enriched, phosphorus-doped $^{28}$Si:P. The optical pump-probe experiments reveal at low temperatures extremely long spin relaxation times which…