Related papers: Cross correlations in mesoscopic charge detection
We report a direct detection of time correlated single-electron tunneling oscillations in a series array of small tunnel junctions. Here the current, I, is made up of a lattice of charge solitons moving throughout the array by time…
We evaluate the detector nonideality (and energy sensitivity) of a normal-state single-electron transistor (SET) in the cotunneling regime in a two-charge-state approximation. For small conductances and at zero temperature, the SET's…
The single electron transistor (SET) is a prime candidate for reading out the final state of a qubit in a solid state quantum computer. Such a measurement requires the detection of sub-electron charge motion in the presence of random…
Electron transport in nano-scale structures is strongly influenced by the Coulomb interaction which gives rise to correlations in the stream of charges and leaves clear fingerprints in the fluctuations of the electrical current. A complete…
We use time-resolved charge detection techniques to investigate single-electron tunneling in semiconductor quantum dots. The ability to detect individual charges in real-time makes it possible to count electrons one-by-one as they pass…
Zero-frequency spectral densities of current noise, charge noise, and their cross-correlation are calculated for the SET transistor in the co-tunneling regime. The current noise has a form expected for the uncorrelated co-tunneling events.…
In a recent Letter by the authors [I.S. Burmistrov and A.M.M. Pruisken, Phys. Rev. Lett. 101, 056801 (2008)] it was shown that single-electron devices (single electron transistor or SET) display "macroscopic charge quantization" which is…
We compare charge transitions on a deterministic single P donor in silicon using radio frequency reflectometry measurements with a tunnel coupled reservoir and DC charge sensing using a capacitively coupled single electron transistor (SET).…
We consider a tunnel junction between two arbitrary non-linear systems in any dimension, which can be different. We show that the tunneling charge can be detected using three alternative methods based on current measurements. Besides being…
We consider a model of a quantum-mechanical resonator capacitively coupled to a single electron transistor (SET). The tunnel current in the SET is modulated by the vibrations of the resonator, and thus the system operates as a displacement…
We observe individual tunnel events of a single electron between a quantum dot and a reservoir, using a nearby quantum point contact (QPC) as a charge meter. The QPC is capacitively coupled to the dot, and the QPC conductance changes by…
We solve the master equations of two charged qubits measured by a single-electron transistor (SET) consisted of two islands. We show that in the sequential tunneling regime the SET current can be used for reading out results of quantum…
An Al-AlO_x-Al single-electron transistor (SET) acting as the gate of a narrow (~ 100 nm) metal-oxide-semiconductor field-effect transistor (MOSFET) can induce a vertically aligned Si SET at the Si/SiO_2 interface near the MOSFET channel…
An approach to experimentally exploring electronic correlation functions in mesoscopic regimes is proposed. The idea is to monitor the mesoscopic fluctuations of a tunneling current flowing between the two layers of a semiconductor…
By using the Schwinger-Keldysh approach, we evaluate the current noise and the charge noise of the single-electron transistor (SET) in the regime of large charge fluctuations caused by large tunneling conductance. Our result interpolates…
We consider charge-qubit monitoring (continuous-in-time weak measurement) by a single-electron transistor (SET) operating in the sequential-tunneling regime. We show that commonly used master equations for this regime are not of the…
Theoretical studies of the tunnelling current and emission spectrum of a single electron transistor (SET) under optical pumping are presented. The calculation is performed via Keldysh Green's function method within the Anderson model with…
The transient tunneling current of single electron transistors (SETs) is theoretically investigated. The time-dependent current formula given by Jauho, Wingreen and Meir [Phys. Rev. B 50, 5528 (1994)] is applied to study the temperature…
New experiments that measure the low-frequency shot-noise spectrum at local tunneling contacts on mesoscopic structures are proposed. The current fluctuation spectrum at a single tunneling tip is determined by local partial densities of…
We predict theoretically and observe in experiment that the differential conductance of a superconducting SET transistor exhibits a peak which is a complete analogue in a macroscopic system of a standard resonant tunneling peak associated…