Related papers: A controllable valley polarization in Graphene
Graphene pn junction is the brick to build up variety of graphene nano-structures. The analytical formula of the conductance of graphene gradual pn junctions in the whole bipolar region has been absent up to now. In this paper, we…
Line waves are defined as confined edge modes propagating at the interface of dual electromagnetic metasurfaces that preserve mirror reflection symmetries. Previous works have theoretically and practically explored these waves, showing that…
So far, selective excitation of a desired valley in the Brillouin zone of a hexagonal two-dimensional material has relied on using circularly polarized fields. We theoretically demonstrate a way to induce, control, and read valley…
We study the electron transmission through the domain boundary on bilayer graphene separating AB and BA stacking regions. Using the effective continuum model, we calculate the electron transmission probability as a function of the electron…
Strain engineering is a versatile method to boost the carrier mobility of two-dimensional materials-based electronics and optoelectronic devices. In addition, strain is ubiquitous during device fabrication via material deposition on a…
Inspired by recent progress in fabricating precisely zigzag-edged graphene nanoribbons and the observation of edge magnetism, we find that spin polarized edge modes with well-defined valley index can exist in a bulk energy gap opened by a…
Electron fully spin-polarized edge states in graphene emerged at the interfaces of a nonuniform magnetic field are studied numerically in a tight-binding model, with both the orbital and Zeeman-splitting effects of magnetic field…
We analyze the problem of electronic transmission through different regions of a graphene sheet that are characterized by different types of connections between the Dirac points. These valley symmetry breaking Hamiltonians might arise from…
We study the intervalley scattering in defected graphene by low-temperature transport measurements. The scattering rate is strongly suppressed when defects are charged. This finding highlights "screening" of the short-range part of a…
Electrons transmitted across a ballistic semiconductor junction undergo refraction, analogous to light rays across an optical boundary. A pn junction theoretically provides the equivalent of a negative index medium, enabling novel electron…
We analyse the interaction between charges and graphene layers. The electric polarisability of graphene induces a force, that can be described by an image charge. The analysis shows that graphene can be described as an imperfect conductor…
Strain is extensively used to controllably tailor the electronic properties of materials. In the context of indirect band-gap semiconductors such as silicon, strain lifts the valley degeneracy of the six conduction band minima, and by…
Gapless bilayer graphene is susceptible to a variety of spontaneously gapped states. As predicted by theory and observed by experiment, the ground state is however topologically trivial, because a valley-independent gap is energetically…
Based on a Dirac-like Hamiltonian and coherent scattering formalism, we study spin-valley transport and Goos-H\"{a}nchen like (GHL) effect of transmitted and reflected electrons in a gated monolayer WS$_2$. Our results show that the lateral…
The use of the spin of the electron as the ultimate logic bit - in what has been dubbed spintronics - can lead to a novel way of thinking about information flow. At the same time single layer graphene has been the subject of intense…
Since its discovery, Berry phase has been demonstrated to play an important role in many quantum systems. In gapped Bernal bilayer graphene, the Berry phase can be continuously tuned from zero to 2pi, which offers a unique opportunity to…
We study spin and valley-dependent transport properties in an n-p-n junction of 8-pmmn borophene monolayer. An external gate voltage and exchange magnetic field, induced by the proximity effect of a ferromagnetic insulator, are applied to…
Understanding strongly interacting electrons enables the design of materials, nanostructures and devices. Developing this understanding relies on the ability to tune and control electron-electron interactions by, e.g., confining electrons…
Numerical calculations have been performed to elucidate unconventional electronic transport properties in disordered nanographene ribbons with zigzag edges (zigzag ribbons). The energy band structure of zigzag ribbons has two valleys that…
Graphene has opened new avenues of research in quantum transport, with potential applications for coherent electronics. Coherent transport depends sensitively on scattering from microscopic disorder present in graphene samples: electron…