Related papers: A controllable valley polarization in Graphene
We calculate the magneto-optical conductivity and electronic density of states for silicene, the silicon equivalent of graphene, and similar crystals such as germanene. In the presence of a perpendicular magnetic field and electric field…
Spin and valley are two fundamental properties of electrons in crystals. The similarity between them is well understood in valley-contrasting physics established decades ago in two-dimensional (2D) materials like graphene--with broken…
In strained graphene, lattice deformation can create pseudo-magnetic fields and result in zero-field Landau level-like quantization. In the presence of an external magnetic field, valley-polarized Landau levels are predicted to be observed…
We propose a directional switching effect in a metallic device. To such end we exploit a graphene-based device with a three-terminal geometry in the presence of a magnetic field. We show that unidirectional charge and valley currents can be…
We investigate charge, valley, and spin transports in normal/ferromagnetic/normal silicene junc- tion. We show that the charge, valley, and spin conductances in this junction oscillate with the length of the ferromagnetic silicene. It is…
The generation of valley current is a fundamental goal in graphene valleytronics but no practical ways of its realization are known yet. We propose a workable scheme for the generation of bulk valley current in a graphene mechanical…
We study the effect of the strain on the band structure and the valley-dependent transport property of graphene heterojunctions. It is found that valley-dependent separation of electrons can be achieved by utilizing the strain and on-site…
The unique gate-voltage dependent optical properties of graphene make it a promising electrically-tunable plasmonic material. In this work, we proposed in-situ control of the polarization of nanoantennas by combining plasmonic structures…
We demonstrated theoretically that the renormalization of the electron energy spectrum near the Dirac point of graphene by a strong high-frequency electromagnetic field (dressing field) drastically depends on polarization of the field.…
Spatially varying strained graphene can acquire interesting electronic properties because of the strain-induced valley-dependent gauge (pseudomagnetic) fields1,2. Here we report the realization of strained graphene regions located close to…
Modulation of electronic states in two-dimensional (2D) materials can be achieved by using in-plane variations of the band gap or the average potential in lateral quantum structures. In the atomic configurations with hexagonal symmetry,…
We propose that a large and tunable valley-selective Hall effect can be realized in a centrosymmetric system via light-induced breaking of inversion and time-reversal symmetries. This is demonstrated in graphene driven by bicircularly…
Introducing quantum confinement has uncovered a rich set of interesting quantum phenomena and allows one to directly probe the physics of confined (quasi-)particles. In most experiments, however, electrostatic potential is the only…
We consider tunneling transport between two parallel graphene sheets where one is a single-layer sample and the other one a bilayer. In the presence of an in-plane magnetic field, the interplay between combined energy and momentum…
The extensive research of two-dimensional layered materials has revealed that valleys, as energy extrema in momentum space, could offer a new degree of freedom for carrying information. Based on this concept, researchers have predicted…
The electron's charge and spin degrees of freedom are at the core of modern electronic devices. With the in-depth investigation of two-dimensional materials, another degree of freedom, valley, has also attracted tremendous research…
The valley degree of freedom in 2D materials can be manipulated for low-dissipation quantum electronics called valleytronics. At the boundary between two regions of bilayer graphene with different atomic or electrostatic configuration,…
Valleytronics is one of the breaking-through to the technology of electronics, which provides a new degree of freedom to manipulate the properties of electrons. Combining DFT calculations, optical absorption analysis and the linear…
Electron's tunneling through potential barrier in monolayer and bilayer graphene lattices is investigated by using full tight-binding model. Emphasis is placed on the resonance tunneling feature and inter-valley scattering probability. It…
The existence of two-inequivalent valleys in the band structure of graphene has motivated the search of mechanisms that allow their separation and control for potential device applications. Among the several schemes proposed in the…