Related papers: Rapid diffusion of electrons in GaMnAs

Spin-gapless semiconductors with their unique band structures have recently attracted much attention due to their interesting transport properties that can be utilized in spintronics applications. We have successfully deposited the thin…

We investigate the electrical properties of nominally undoped, 10-40-nm-thick ScN(111) layers grown on nearly lattice-matched GaN:Fe/Al$_2$O$_3$(0001) templates by plasma-assisted molecular beam epitaxy. Hall-effect measurements yield…

A self-consistent electronic structure calculation based on the Luttinger-Kohn model is performed on GaMnAs/GaAs multilayers. The Diluted Magnetic Semiconductor layers are assumed to be metallic and ferromagnetic. The high Mn concentration…

We have studied spin dephasing and spin diffusion in a high-mobility two-dimensional electron system, embedded in a GaAs/AlGaAs quantum well grown in the [110] direction, by a two-beam Hanle experiment. For very low excitation density, we…

Using ammonia as nitrogen source for molecular beam epitaxy, the GaN-based diluted magnetic semiconductor Ga1-xMnxN is successfully grown with Mn concentration up to x~6.8% and with p-type conductivity. The films have wurtzite structure…

The control over impurities like hydrogen and oxygen is of key importance in nitride-based semiconducting due to their unrivaled applicability in optoelectronics and high power/high frequency electronics. Therefore, it is desirable to…

We quantify the mechanisms for manganese (Mn) diffusion through graphene in Mn/graphene/Ge (001) and Mn/graphene/GaAs (001) heterostructures for samples prepared by graphene layer transfer versus graphene growth directly on the…

We report a magnetotransport study of an ultra-high mobility ($\bar{\mu}\approx 25\times 10^6$\,cm$^2$\,V$^{-1}$\,s$^{-1}$) $n$-type GaAs quantum well up to 33 T. A strong linear magnetoresistance (LMR) of the order of 10$^5$ % is observed…

We report on the direct measurement of two-dimensional sheet charge density dependence of electron transport in AlGaN/GaN high electron mobility transistors. Pulsed IV measurements established increasing electron velocities with decreasing…

In condensed matter, scattering processes determine the transport of charge carriers. In case of heterostructures, interfaces determine many dynamic properties like charge transfer and transport and spin current dynamics. Here we discuss…

We study the growth and properties of quaternary-alloy ferromagnetic semiconductor (FMS) (In0.94-x,Gax,Fe0.06)Sb (x = 5% - 30%, Fe concentration is fixed at 6%) grown by low temperature molecular beam epitaxy (LT-MBE).Reflection high-energy…

Half-metallic ferromagnets can produce fully spin-polarized conduction electrons and can be applied to fabricate spintronic devices. Thus, in this study, the electronic structure, magnetic properties, and optical properties of GaSb, which…

For the prototype diluted ferromagnetic semiconductor (Ga,Mn)As, there is a fundamental concern about the electronic states near the Fermi level, i.e., whether the Fermi level resides in a well-separated impurity band derived from Mn doping…

Optical grating technique, where optical gratings are generated via light inference, has been widely used to measure charge carrier and phonon transport in semiconductors. In this paper, compared are three types of transient optical grating…

Grain boundary self-diffusion of $^{57}$Co, $^{51}$Cr, $^{59}$Fe and $^{54}$Mn in a coarse-grained, single-phase fcc CoCrFeMnNi high entropy alloy is measured in a wide temperature range of 643 to 1273~K in both C- and B-type kinetic…

Excess conductance fluctuations with peculiar temperature-dependence from 1.4 to 250 K were observed in curved nano-graphite sheets with an electrode gap length of 300 and 450 nm, whereas the conductance fluctuation is greatly suppressed…

We present data on mobility lifetime, $\tau_t$, quantum lifetime, $\tau_q$, and cyclotron resonance lifetime, $\tau_{CR}$, of a sequence of high-mobility two-dimensional electron gases in the AlGaN/GaN system, covering a density range of…

Magnetic and magneto-transport properties of thin layers of the (Ga,Mn)(Bi,As) quaternary dilute magnetic semiconductor grown by the low-temperature molecular-beam epitaxy technique on GaAs substrates have been investigated. Ferromagnetic…

We report on time-resolved and steady-state photoluminescence studies of GaAs/AlGaAs V-groove quantum wire structures. Steady-state photoluminescence experiments are performed in the temperature range from 8K to 200K. We evaluate the…

We present systematic studies of the transient dynamics of GaAs by ultrafast time-resolved optical reflectivity. In photo excited non-equilibrium states, we found a sign reverse in transient reflectivity spectra $\Delta R/R$ (t $>$ 0), from…