Related papers: Linear magnetoresistance in HgTe quantum wells
The magnetic field opens a gap in the edge state spectrum of two-dimensional topological insulators thereby destroying protection of these states against backscattering. To relate properties of this gap to parameters of the system and to…
HgTe quantum wells with a thickness of ${\sim}$7 nm may have a graphene-like band structure and have been recently proposed to be potential candidates for quantum Hall effect (QHE) resistance standards under the condition of operation in…
We perform a symmetry analysis of a 2D electron system in HgTe/HgCdTe quantum wells in the situation when the chemical potential is outside of the gap, so that the bulk of the quantum well is conducting. In order to investigate quantum…
The realization of quantum spin Hall (QSH) effect in HgTe quantum wells (QWs) is considered a milestone in the discovery of topological insulators. The QSH edge states are predicted to allow current to flow at the edges of an insulating…
The two-dimensional topological insulator phase has been observed previously in single HgTe-based quantum wells with inverted subband ordering. In double quantum wells (DQWs), coupling between the layers introduces additional degrees of…
Inverted HgTe/CdTe quantum wells have been used as a platform for the realization of 2D topological insulators, bulk insulator materials with spin-helical metallic edges states protected by time-reversal symmetry. This work investigates the…
We have studied quantized transport in HgTe wells with inverted band structure corresponding to the two-dimensional topological insulator phase (2D TI) with locally-controlled density allowing n-p-n and n-2D TI-n junctions. The resistance…
We study the electronic transport across an electrostatically-gated lateral junction in a HgTe quantum well, a canonical 2D topological insulator, with and without applied magnetic field. We control carrier density inside and outside a…
Two-component conductors -- e.g., semi-metals and narrow band semiconductors -- often exhibit unusually strong magnetoresistance in a wide temperature range. Suppression of the Hall voltage near charge neutrality in such systems gives rise…
The HgTe quantum well (QW) is a well-characterized two-dimensional topological insulator (2D-TI). Its band gap is relatively small (typically on the order of 10 meV), which restricts the observation of purely topological conductance to low…
Topological insulators represent a new quantum state of matter which is characterized by edge or surface states and an insulating band gap in the bulk. In a two dimensional (2D) system based on the HgTe quantum well (QW) of critical width…
We present magneto transport experiments of quasi 3D PbTe wide quantum wells. A plateau-like structure in the Hall resistance is observed, which corresponds to the Shubnikov de Haas oscillations in the same manner as known from the quantum…
We investigate the current noise in HgTe-based quantum wells with an inverted band structure in the regime of disordered edge transport. Consistent with previous experiments, the edge resistance strongly exceeds $h/e^2$ and weakly depends…
Localization of the helical edge states in quantum spin Hall insulators requires breaking time reversal invariance. In experiments this is naturally implemented by applying a weak magnetic field B. We propse a model based on scattering…
The surface quantum Hall state, magneto-electric phenomena and their connection to axion electrodynamics have been studied intensively for topological insulators. One of the obstacles for observing such effects comes from nonzero…
The 2D HgTe quantum well is analyzed based on the assumption that the width fluctuations convert the system to a random mixture of domains with positive and negative energy gaps. The borders between ordinary and topological insulator phases…
We report the results of an experimental study of the magnetoresistance $\rho_{xx}$ in two samples of $p$-Si/SiGe/Si with low carrier concentrations $p$=8.2$\times10^{10}$ cm$^{-2}$ and $p$=2$\times10^{11}$ cm$^{-2}$. The research was…
We have investigated low-temperature electronic transport on InAs/GaSb double quantum wells, a system which promises to be electrically tunable from a normal to a topological insulator. Hall bars of $50\,\mu$m in length down to a few $\mu$m…
We have investigated experimentally the magnetoresistance of strongly asymmetric double-wells. The structures were prepared by inserting a thin Al$_{0.3}$Ga$_{0.7}$As barrier into the GaAs buffer layer of a standard modulation-doped…
A model of bound state formation from the delocalized edge states of 2D topological insulator is derived by considering the effects of magnetic barriers attached to the edge of the HgTe/CdTe quantum well. The resulting structure has a…