Related papers: Design principles for HgTe based topological insul…
Topological insulators are a newly discovered phase of matter characterized by a gapped bulk surrounded by novel conducting boundary states. Since their theoretical discovery, these materials have encouraged intense efforts to study their…
We report on the observation of the quantum Hall effect at high temperatures in HgTe quantum wells with a finite band gap and a thickness below and above the critical thickness $d_\textnormal{c}$ that separates a conventional semiconductor…
Topological insulators are electronic materials that have a bulk band gap like an ordinary insulator, but have protected conducting states on their edge or surface. The 2D topological insulator is a quantum spin Hall insulator, which is a…
The experiments in quantum spin Hall insulator candidate materials, such as HgTe/CdTe and InAs/GaSb heterostructures, indicate that in addition to the topologically protected helical edge modes these multilayer heterostructures may also…
Using the tight-binding BHZ model and Landauer-B\"uttiker formalism, the topological invariant of the finite width of ribbons of HgTe/CdTe quantum well is studied in the absence and presence of an external transverse electric field. It will…
We study a topological phase transition between a normal insulator and a quantum spin Hall insulator in two-dimensional (2D) systems with time-reversal and two-fold rotation symmetries. Contrary to the case of ordinary time-reversal…
We show that hybrid structures of topological insulators and materials without topological protection can be employed to create perfectly conducting channels hosted in the non-topological part. These states inherit the topological…
Recently, level crossings in the energy bands of crystals have been identified as a key signature for topological phase transitions. Using realistic models we show that the parameter space controlling the occurrence of level coincidences in…
We investigate experimentally transport in gated microsctructures containing a band-inverted HgTe/Hg_{0.3}Cd_{0.7}Te quantum well. Measurements of nonlocal resistances using many contacts prove that in the depletion regime the current is…
We report on a temperature-induced transition from a conventional semiconductor to a two-dimensional topological insulator investigated by means of magnetotransport experiments on HgTe/CdTe quantum well structures. At low temperatures, we…
Topological insulators (TIs) are a new quantum state of matter which have gapless surface states inside the bulk energy gap. Starting with the discovery of two dimensional TIs, the HgTe-based quantum wells, many new topological materials…
Inverted HgTe/CdTe quantum wells have been used as a platform for the realization of 2D topological insulators, bulk insulator materials with spin-helical metallic edges states protected by time-reversal symmetry. This work investigates the…
The effect of quantizing magnetic field on the electron transport is investigated in a two dimensional topological insulator (2D TI) based on a 8 nm (013) HgTe quantum well (QW). The local resistance behavior is indicative of a…
Topological phase transitions between a conventional insulator and a state of matter with topological properties have been proposed and observed in mercury telluride - cadmium telluride quantum wells. We show that a topological state can be…
The 2D HgTe quantum well is analyzed based on the assumption that the width fluctuations convert the system to a random mixture of domains with positive and negative energy gaps. The borders between ordinary and topological insulator phases…
We report on transport and capacitance spectroscopy study of two kinds of quantum wells, namely Cd$_{0.02}$Hg$_{0.98}$Te and Cd$_{0.06}$Hg$_{0.94}$Te with the thicknesses of 7.4 and 11.5 nm, accordingly. The fraction of Cd was chosen in a…
We study theoretically 2D HgTe/CdTe quantum well topological insulator (TI) illuminated by circularly polarized light with frequencies higher than the difference between the equilibrium Fermi level and the bottom of the conduction band (THz…
Topological quantum matter is characterized by non-trivial global invariants of the bulk which induce gapless electronic states at its boundaries. A case in point are two-dimensional topological insulators (2D-TI) which host one-dimensional…
The most interesting experimental results obtained in studies of 2D and 3D topological insulators (TIs) based on HgTe quantum wells and films are reviewed. In the case of 2D TIs, these include the observation of nonlocal ballistic and…
We have measured the differential resistance in a two-dimensional topological insulator (2DTI) in a HgTe quantum well, as a function of the applied dc current. The transport near the charge neutrality point is characterized by a pair of…