Related papers: Transport through a disordered topological-metal s…
Quantized conductance from topologically protected edge states is a hallmark of two-dimensional topological phases. In contrast, edge states in one-dimensional (1D) topological systems cannot transmit current across the insulating bulk,…
We study disorder effects on the surface states of the topological insulator Bi$_2$Se$_3$ close to the topologically protected crossing point. Close to charge neutrality, local fluctuations in carrier density arising from the random charged…
Topological behavior can be masked when disorder is present. A topological insulator, either intrinsic or interaction induced, may turn gapless when sufficiently disordered. Nevertheless, the metallic phase that emerges once a topological…
We study the suppression of the conductance quantization in quantum spin Hall systems by a combined effect of electronic interactions and edge disorder, that is ubiquitous in exfoliated and CVD grown 2D materials. We show that the interplay…
The hallmark property of two-dimensional topological materials is the incredible robustness of the quantized Hall conductivity to disorder. That robustness arises from the fact that in the topological band gap, transport can occur only…
Time-dependent perturbations can drive a trivial two-dimensional band insulator into a quantum Hall-like phase, with protected nonequilibrium states bound to its edges. We propose an experiment to probe the existence of these topological…
The effect of surface disorder on electronic systems is particularly interesting for topological phases with surface and edge states. Using exact diagonalization, it has been demonstrated that the surface states of a 3D topological…
Algebraic and geometric mean density of states in disordered systems may reveal properties of electronic localization. In order to understand the topological phases with disorder in two dimensions, we present the calculated density of…
A strip of 2D HgTe topological insulator is studied. The same-spin edge states in ideal system propagate in opposite directions on different sides of the strip and do not mix by tunneling. Impurities, edge irregularities, and phonons…
Impurities and defects are ubiquitous in topological insulators (TIs) and thus understanding the effects of disorder on electronic transport is important. We calculate the distribution of the random conductance fluctuations $P(G)$ of…
Topological insulators are characterized by specially protected conduction on their outer boundaries. We show that the protected edge conduction exhibited by 2-D topological insulators (and also Chern insulators) is independent of…
Topology and disorder have deep connections and a rich combined influence on quantum transport. In order to probe these connections, we synthesized one-dimensional chiral symmetric wires with controllable disorder via spectroscopic…
Recently, a new family of symmetry-protected higher-order topological insulators has been proposed and was shown to host lower-dimensional boundary states. However, with the existence of the strong disorder in the bulk, the crystal symmetry…
The effect of disorder on a class of transition metal oxides described by a single orbital Hubbard model at half filling is investigated. The phases are characterized by the nature of the electronic and spin excitations. The frequency and…
Two-dimensional (2D) topological electronic insulators are known to give rise to gapless edge modes, which underlie low energy dynamics, including electrical and thermal transport. This has been thoroughly investigated in the context of…
A different type of topological phase dubbed topological inverse Anderson insulators is proposed, which is characterized by the disorder-induced extended bulk states from the flat-band localization and topological edge states. Based on the…
Topological states of matter have attracted a lot of attention due to their many intriguing transport properties. In particular, two-dimensional topological insulators (2D TI) possess gapless counter propagating conducting edge channels,…
We investigate the scattering and localization properties of edge and bulk states in a disordered two-dimensional topological insulator when they coexist at the same fermi energy. Due to edge-bulk backscattering (which is not prohibited…
We present a theoretical approach to describe the 2D transport properties of the surfaces of three dimensional topological insulators (3DTIs) including disorder and phonon scattering effects. The method that we present is able to take into…
We study the spin transport properties of some disordered spin chains with a special focus on the distribution of the frequency-dependent spin conductivity. In the cases of interest here, the systems are governed by an effectively infinite…