Related papers: Graphene transistors for bioelectronics
Graphene has attracted much attention as one of promising candidates of future high-speed transistor materials because of its high carrier mobility of more than 10,000 cm2 V-1 s-1. Up to this point, we have focused on the contact properties…
Graphene, a 2-dimensional monolayer form of sp2 hybridizated carbon atoms, is attracting increasing attention due to its unique and superior physicochemical properties. Covalently functionalized graphene layers, with their modifiable…
We improvise a novel approach to carry out first-principles simulations of graphene-based vertical field effect tunneling transistors that consist of a graphene$|${\it h}-BN$|$graphene multilayer structure. Within the density functional…
We invented a novel method to fabricate graphene transistors on oxidized silicon wafers without the need to transfer graphene layers. By means of catalytic chemical vapor deposition (CCVD) the in-situ grown bilayer graphene transistors…
Three types of first generation epitaxial graphene field effect transistors (FET) are presented and their relative merits are discussed. Graphene is epitaxially grown on both the carbon and silicon faces of hexagonal silicon carbide and…
By means of numerical simulation, we study in this work the effects of uniaxial strain on transport properties of strained graphene heterojunctions and explore the possibility to achieve good performance of graphene transistors using these…
we have fabricated transparent electronic devices based on graphene materials with thickness down to one single atomic layer by the transfer printing method. The resulting printed graphene devices retain high field effect mobility and have…
Graphene is of interest in the development of next-generation electronics due to its high electron mobility, flexibility and stability. However, graphene transistors have poor on/off current ratios because of the absence of a bandgap. One…
We present a circuit-compatible compact model of the intrinsic capacitances of graphene field-effect transistors (GFETs). Together with a compact drain current model, a large-signal model of GFETs is developed combining both models as a…
The maturity of the chemical vapor deposition graphene-based device processing has increased from chip level demonstrations to wafer-scale fabrication in the past few years. Due to this wafer-scale, electrical characterization and analysis…
We obtain the output and transfer characteristics of graphene field-effect transistors by using the charge-control model for the current, based on the solution of the Boltzmann equation in the field-dependent relaxation time approximation.…
Electrostatically tunable Josephson field-effect transistors (JoFETs) are one of the most desired building blocks of quantum electronics. JoFET applications range from parametric amplifiers and superconducting qubits to a variety of…
Graphene field-effect transistors are integrated with solution-processed multilayer hybrid organic-inorganic self-assembled nanodielectrics (SANDs). The resulting devices exhibit low-operating voltage (2 V), negligible hysteresis, current…
Graphene field-effect transistors (GFETs) are experimental devices which are increasingly seeing commercial and research applications. Simulation and modelling forms an important stage in facilitating this transition, however the majority…
We utilize an organic polymer buffer layer between graphene and conventional gate dielectrics in top-gated graphene transistors. Unlike other insulators, this dielectric stack does not significantly degrade carrier mobility, allowing for…
Graphene provides a unique platform for hosting high quality 2D electron systems. Encapsulating graphene with hexagonal boron nitride (hBN) to shield it from noisy environments offers the potential to achieve ultrahigh performance…
We present prominent photoresponse of bio-inspired graphene-based phototransistors sensitized with chlorophyll molecules. The hybrid graphene-chlorophyll phototransistors exhibit a high gain of 10^6 electrons per photon and a high…
This work evaluates the performance of carbon nanotube field effect transistors (CNTFET) using few layer graphene as the contact electrode material. We present the experimental results obtained on the barrier height at CNT graphene junction…
We propose an analytical device model for a graphene nanoribbon field-effect transistor (GNR-FET). The GNR-FET under consideration is based on a heterostructure which consists of an array of nanoribbons clad between the highly conducting…
The performance of graphene-based transistors is often limited by the large electrical resistance across the metal-graphene contact. We report an approach to achieve ultra-low resistance metal contacts to graphene transistors. Through a…