Related papers: Tunneling spectroscopy of phosphorus impurity atom…
The effects of isolated residual-gas adsorbates on the local electronic structure of the Dy(0001) surface were spatially mapped by scanning tunneling microscopy and spectroscopy at 12 K. Less than 15 A away from an adsorbate, a strong…
We describe the effects of electronic perturbation distributed on nearest neighbor sites to the impurity center in a planar \textit{d}-wave superconductor, in approximation of circular Fermi surface. Alike the behavior previously reported…
While the impurity-induced nanoscale electronic disorder has been extensively reported in the underdoped iron pnictides, its microscopic origins remain elusive. Recent scanning tunneling microscopy (STM) measurements reveal a dimer-type…
We have used density functional theory calculations based on the projector augmented wave method to investigate the electronic structure of Au-incorporated anatase TiO$_2$(001) surface. Due to the coordination with several level oxygens, Au…
In order to examine to what extent the rigid-band-like electron doping scenario is applicable to the transition metal-substituted Fe-based superconductors, we have performed angle-resolved photoemission spectroscopy studies of…
We study an impurity with a resonance level whose energy coincides with the Fermi energy of the surrounding Fermi gas. An impurity causes a rapid variation of the scattering phase shift for fermions at the Fermi surface, introducing a new…
Physical properties of Si(111)-7x7 surface of low-doped n- and p-type Si samples is studied in the liquid helium temperature region by the scanning-tunnelling microscopy and spectroscopy. Conduction required for the study is provided by…
We study theoretically the physical properties of a magnetic impurity in graphene. Within the Anderson model for a very strong Coulomb interaction on the impurity, we start from the Slave-Boson method and introduce a topological picture…
It is shown that layered superconductors are subjected to a phase transition at zero temperature provided the order parameter (OP) reverses its sign on the Fermi-surface but its angular average is finite. The transition is regulated by an…
We investigate the electronic and magnetic properties of copper-doped Pb$_{10}$(PO$_4$)$_6$O using a combination of density functional theory and many-body perturbation theory. The flat half-filled electronic band at the Fermi level is…
Angle resolved photoemission (ARPES) data from the electron doped cuprate superconductor Sm$_{1.86}$Ce$_{0.14}$CuO$_4$ shows a much stronger pseudo-gap or "hot-spot" effect than that observed in other optimally doped $n$-type cuprates.…
We have performed angle-resolved photoemission spectroscopy (ARPES) measurements and first-principles electronic structure calculations on the electron-doped high-Tc superconductors Ln1.85Ce0.15CuO4 (Ln = Nd, Sm, and Eu). The observed Fermi…
To explore the origin of the Fermi level pinning in germanium we investigate the Ge(001) and Ge(001):H surfaces. The absence of relevant surface states in the case of Ge(001):H should unpin the surface Fermi level. This is not observed. For…
The electronic structure of the transparent semiconductor In2O3 has been studied by angle resolved photoemission spectroscopy upon deposition of metallic indium and also tin on the surface of the semiconductor. By deposition of metallic…
The electron dynamics of the topological surface state on Bi2Se3(111) is investigated by temperature-dependent angle-resolved photoemission. The electron-phonon coupling strength is determined in a spectral region for which only intraband…
Unique electronic band structure of graphene with its semi-metallic features near the charge neutrality point is sensitive to impurity effects. Using the Lifshitz and Anderson impurity models, we study in detail the disorder induced…
Impurities that are present on the surface of a metal often have internal degrees of freedom. Inelastic scattering due to impurities can be revealed by observing local features seen in the tunneling current with scanning tunneling…
We investigate single Ge and Ag impurities buried below a Cu(100) surface using low temperature scanning tunneling microscopy. The interference patterns in the local density of states are surface scattering signatures of the bulk…
The scattering potential of the defects on Ge(001) surfaces is investigated by first-principles methods. The standing wave in the spatial map of the local density of states obtained by wave function matching is compared to the image of the…
We investigate transport in phosphorus-doped buried-channel metal-oxide-semiconductor field-effect transistors at temperatures between 10 and 295 K. In a range of doping concentration between around 2.1 and 8.7 x 1017 cm-3, we find that a…