Related papers: Analytical approach for type-II semiconductor sphe…
We have used angle resolved photoemission spectroscopy to investigate the band structure of ReS$_2$, a transition-metal dichalcogenide semiconductor with a distorted 1T crystal structure. We find a large number of narrow valence bands,…
We investigate the behaviour of hard-core bosons in one- and two-dimensional flat band systems, the chequerboard and the kagom\'e lattice and one-dimensional analogues thereof. The one dimensional systems have an exact local reflection…
An analytical model is developed to study the spectra of electromagnetic dissociation of two-neutron halo nuclei without precise knowledge about initial and final states. Phenomenological three-cluster bound state wave functions,…
Two electrons at the threshold of ionization represent a severe test case for electronic structure theory. A pseudospectral method yields a very accurate density of the two-electron ion with nuclear charge close to the critical value.…
In this article we employ density functional theory in the generalized gradient approximation to investigate the structural and electronic properties of the solid solution alloy $\text{Zn}\text{Se}_x\text{S}_{1-x}$ in the wurtzite…
In this work we investigate novel spherical core-shell nanoparticles with band inversion. The core and the embedding medium are normal semiconductors while the shell material is assumed to be a topological insulator. The envelope functions…
In this article we propose and numerically implement a mathematical model for the simulation of three-dimensional semiconductor devices characterized by an heterogeneous material structure. The model consists of a system of nonlinearly…
We develop a quantum mechanical theory to describe the optical response of semiconductor nanostructures with a particular emphasis on higher-order harmonic Generation. Based on a tight-binding approach we take all two-particle correlations…
Spherical shaped Si quantum dots (QDs) embedded into the SiO2 substrate are considered in the single sub-band effective mass approach. Nonparabolicity of the Si conduction band is described by the energy dependence of electron effective…
: n-type Ge/SiGe asymmetric-coupled quantum wells represent the building block of a variety of nanoscale quantum devices, including recently proposed designs for a silicon-based THz quantum cascade laser. In this paper, we combine…
A simple theoretical method for deducing the effective bond-orbital model (EBOM) of III-nitride wurtzite (WZ) semiconductors is presented. In this model, the interaction parameters for zinc-blende (ZB) structures are used as an initial…
We present experimental coherent two-dimensional Fourier transform spectra of the exciton resonances in semiconductor quantum wells for a pulse sequence that isolates two-quantum coherences. By measuring the real part of the spectra, we can…
As shown by Overhauser and others, accurate pair densities for the uniform electron gas may be found by solving a two-electron scattering problem with an effective screened electron-electron repulsion. In this work we explore the extension…
We present a contactless method that is capable of characterizing a high electron mobility transistor heterostructure at the wafer stage, right after its growth, before any production process has been attempted, to provide the equilibrium…
We report a transport, thermodynamic, and spectroscopic study of the recently identified topological semiconductor ZrTe$_5$ with a focus on elucidating the connections between its band structure and unusual thermoelectric properties. Using…
The quantum dynamics of an electron in a uniform magnetic field is studied for geometries corresponding to integrable cases. We obtain the uniform asymptotic approximation of the WKB energies and wavefunctions for the semi-infinite plane…
We propose an efficient reduced-order technique for electronic structure calculations of semiconductor nanostructures, suited for inclusion in full-band quantum transport simulators. The model is based on the linear combination of bulk…
Study of the N ~ Z nuclei in the mass-80 region is not only interesting due to the existence of abundant nuclear structure phenomena, but also important in understanding the nucleosynthesis in the rp-process. It is not feasible to apply a…
A universal theoretical model is proposed that explains the observed shift of IR absorption and emission bands in the spectra of transition metal ions in solid solutions of semiconductor compounds. The model has been used for estimating the…
Semiconducting transition metal dichalcogenides present a complex electronic band structure with a rich orbital contribution to their valence and conduction bands. The possibility to consider the electronic states from a tight-binding model…