Related papers: Domain wall roughness and creep in nanoscale cryst…
The static configuration of ferroelectric domain walls was investigated using atomic force microscopy on epitaxial PbZr0.2Ti0.8O3 thin films. Measurements of domain wall roughness reveal a power law growth of the correlation function of…
Ferroelectric switching and nanoscale domain dynamics were investigated using atomic force microscopy on monocrystalline Pb(Zr0.2Ti0.8)O3 thin films. Measurements of domain size versus writing time reveal a two-step domain growth mechanism,…
Atomic force microscopy was used to investigate ferroelectric switching and nanoscale domain dynamics in epitaxial PbZr0.2Ti0.8O3 thin films. Measurements of the writing time dependence of domain size reveal a two-step process in which…
Using the model system of ferroelectric domain walls, we explore the effects of long-range dipolar interactions and periodic ordering on the behavior of pinned elastic interfaces. In piezoresponse force microscopy studies of the…
Domain walls are of increasing interest in ferroelectrics because of their unique properties and potential applications in future nanoelectronics. However, the thickness of ferroelastic domain walls remains elusive due to the challenges in…
Domain walls in ferroelectrics exhibit a plethora of phases and functionalities not found in the bulk. The interplay of electrostatic, chemical, topological, and distortive inhomogeneities at the walls can be so complex, however, that this…
Using multiscaling analysis, we compare the characteristic roughening of ferroelectric domain walls in PZT thin films with numerical simulations of weakly pinned one-dimensional interfaces. Although at length scales up to a length scale…
We investigated the ferroelectric domain wall propagation in epitaxial Pb(Zr,Ti)O3 thin films over a wide temperature range (3 - 300 K). We measured the domain wall velocity under various electric fields and found that the velocity data is…
Ferroelastic domain walls (DWs) underpin key functionalities in complex oxides. In free-standing ferroic thin films, where elastic interactions are highly thickness dependent, understanding DW behaviour across length scales and external…
Understanding and controlling the motion, stability, and equilibrium configuration of ferroelectric domain walls is key for their integration into potential nanoelectronics applications, such as ferroelectric racetrack memories. Using…
Flat phonon bands in fluorite ferroelectrics (HfO2 or ZrO2) shrink polar domains laterally to an irreducible half-unit-cell width (0.27 nm) within which the vertical arrangement of dipoles is expected to remain uniform. We report on the…
We report the first investigation of the piezoelectric response on a nanoscale in the poled ferroelectric crystals with engineered configuration of domains. Piezoresponse force microscopy of tetragonal 0.63PMN-0.37PT relaxor-based…
The magnetic domain wall motion driven by a magnetic field is studied in (Ga,Mn)As and (Ga,Mn)(As,P) films of different thicknesses. In the thermally activated creep regime, a kink in the velocity curves and a jump of the roughness exponent…
We report electrically switchable polarization and ferroelectric domain scaling over a thickness range of 5-100 nm in BiFeO3 films deposited on [110] vicinal substrates. The BiFeO3 films of variable thickness were deposited with SrRuO3…
Ferroelectric domain walls represent multifunctional 2D-elements with great potential for novel device paradigms at the nanoscale. Improper ferroelectrics display particularly promising types of domain walls, which, due to their unique…
Ferroelectric domain walls are quasi-2D systems that show great promise for the development of non-volatile memory, memristor technology and electronic components with ultra-small feature size. Electric fields, for example, can change the…
We report the nanoscale electrical imaging results in hexagonal $Lu_{0.6}Sc_{0.4}FeO_3$ single crystals using conductive atomic force microscopy (C-AFM) and scanning microwave impedance microscopy (MIM). While the dc and ac response of the…
Ferroelectrics display spontaneous and switchable electrical polarization. Until recently, ferroelectricity was believed to disappear at the nanoscale; now, nano-ferroelectrics are being considered in numerous applications. This renewed…
Dynamics of magnetization domain walls (DWs) in thin ferromagnetic nanotubes subject to longitudinal external fields is addressed analytically in the regimes of strong and weak penalization. Explicit functional forms of the DW profiles and…
The conductance of domain wall structures consisting of either stripes or cylindrical domains in multi-axial ferroelectric-semiconductors is analyzed. The effects of the domain size, wall tilt and curvature, on charge accumulation, are…