Related papers: Non-volatile Spin Switch for Boolean and Non-Boole…
Emerging spin-torque (ST) phenomena may lead to ultra-low-voltage, high-speed nano-magnetic switches. Such current-based-switches can be attractive for designing low swing global-interconnects, like, clocking-networks and databuses. In this…
Current induced spin-orbit torques driven by the conventional spin Hall effect are widely used to manipulate the magnetization. This approach, however, is nondeterministic and inefficient for the switching of magnets with perpendicular…
A voltage-controlled topological-spin switch (vTOPSS) that uses a hybrid topological insulator-magnetic insulator multiferroic is presented that can implement Boolean logic operations with sub-10 aJ energy-per-bit and energy-delay product…
The spin Hall effect does not generally result in a charge Hall voltage. We predict that in systems with inhomogeneous electron density in the direction perpendicular to main current flow, the spin Hall effect is instead accompanied by a…
We propose a method for inducing magnetization reversal using an AC spin current polarized perpendicular to the equilibrium magnetization of the free magnetic layer. We show that the critical AC spin current is significantly smaller than…
A magnetic vortex is a curling magnetic structure realized in a ferromagnetic disk, which is a promising candidate of a memory cell for future nonvolatile data storage devices. Thus, understanding of the stability and dynamical behaviour of…
In this work, we propose valley-coupled spin-hall memories (VSH-MRAMs) based on monolayer WSe2. The key features of the proposed memories are (a) the ability to switch magnets with perpendicular magnetic anisotropy (PMA) via VSH effect and…
We propose a spin transistor using only non-magnetic materials that exploits the characteristics of bulk inversion asymmetry (BIA) in (110) symmetric quantum wells. We show that extremely large spin splittings due to BIA are possible in…
Nanomagnetic logic, which makes use of arrays of dipolar-coupled single domain nanomagnets for computation, holds promise as a low power alternative to traditional computation with CMOS. Beyond the use of nanomagnets for Boolean logic,…
We propose and develop a concept of magnonic logic gates enabling reversible computing. The gates consist of passive elements: waveguides, cross-junctions and phase shifters. Logical 0 and 1 are encoded in the relative phase of the…
Single-molecule memory device based on a single-molecule magnet (SMM) is one of the ultimate goals of semiconductor nanofabrication technologies. Here, we study how to manipulate and readout the SMM's two spin-state of stored information…
An array of spin torque oscillators (STOs) for practical applications such as pattern recognition was recently proposed, where several STOs are connected by a common nonmagnet. In this structure, in addition to the electric and/or magnetic…
While the helical character of the edge channels responsible for charge transport in the quantum spin Hall regime of a two-dimensional topological insulator is by now well established, an experimental confirmation that the transport in the…
The need to find low power alternatives to digital electronic circuits has led to increasing interest in alternative switching schemes like the magnetic quantum cellular automata(MQCA) that store information in nanomagnets which communicate…
Direct and inverse spin Hall effects lie at the heart of novel applications that utilize spins of electrons as information carriers, allowing generation of spin currents and detecting them via the electric voltage. In the standard…
Topological insulators and giant spin-orbit toque switching of nanomagnets are one of the frontier topics for the development of energy-efficient spintronic devices. Spin-circuit representations involving different materials and phenomena…
The spin-Hall effect describes the interconversion of charge currents and spin currents, enabling highly efficient manipulation of magnetization for spintronics. Symmetry conditions generally restrict polarizations of these spin currents to…
Room temperature operation of a spin exclusive or (XOR) gate was demonstrated in lateral spin valve devices with nondegenerate silicon (Si) channels. The spin XOR gate is a fundamental part of the magnetic logic gate (MLG) that enables…
Valley-spin hall (VSH) effect in monolayer WSe2 has been shown to exhibit highly beneficial features for nonvolatile memory (NVM) design. Key advantages of VSH-based magnetic random-access memory (VSH-MRAM) over spin orbit torque (SOT)-MRAM…
An impressive success of spintronic applications has been typically realized in metal-based structures which utilize magnetoresistive effects for substantial improvements in the performance of computer hard drives and magnetic random access…