Related papers: Lessons from Oxypnictide Thin Films
Delafossites, comprised of noble metal (A+) and strongly correlated sublayers (BO2-), form natural superlattices with highly anisotropic properties. These properties hold significant promise for various applications, but their exploitation…
Synchrotron-based x-ray reflectivity is increasingly employed as an \textit{in situ} probe of surface morphology during thin film growth, but complete interpretation of the results requires modeling the growth process. Many models have been…
The in-plane resistivity has been measured in $La_{2-x}Sr_xCuO_4$ (LSxCO) superconducting thin films of underdoped ($x=0.10,0.12$), optimally-doped ($x=0.15$) and overdoped ($x=0.20,0.25$) compositions. These films were grown on…
We report molecular beam epitaxy growth of Sr-doped Bi$_2$Se$_3$ films on (111) BaF$_2$ substrate, aimed to realize unusual superconducting properties inherent to Sr$_x$Bi$_2$Se$_3$ single crystals. Despite wide range of the compositions,…
Ultra-thin Hf1-xZrxO2 films have attracted tremendous interest owing to their Si-compatible ferroelectricity arising from polar polymorphs. While these phases have been grown on Si as polycrystalline films, epitaxial growth was only…
During the growth of metal thin films on dielectric substrates at a given deposition temperature T, the film's morphology is conditioned by the magnitude and asymmetry of up- and downhill diffusion. Any severe change of this mechanism leads…
Molecular beam epitaxy enables the growth of thin film materials with novel properties and functionalities. Typically, the lattice constants of films and substrates are designed to match to minimise disorders and strains. However,…
Growth of MgB2 thin films by pulsed laser deposition is examined under ex situ and in situ processing conditions. For the ex situ process, Boron films grown by PLD were annealed at 900 C with excess Mg. For the in situ process, different…
Coherent epitaxial growth allows to produce crystalline films with strained structures which are unstable in the bulk. Thereby, the relationship between the lattice parameters of the overlayer in the interface plane, $(a,b)$, and its…
Vapor-pressure mismatched materials such as transition metal chalcogenides have emerged as electronic, photonic, and quantum materials with scientific and technological importance. However, epitaxial growth of vapor-pressure mismatched…
The interrelation between the epitaxial strain and oxygen deficiency in La0.7Ca0.3MnO3-{\delta} thin films was studied in terms of structural and functional properties. The films with a thickness of 1000{\AA} were prepared using a PLD…
Herein, we report CeIrIn5 thin-film growth on a MgF2 (001) substrate using pulsed laser deposition technique. X-ray diffraction analysis showed that the thin films were either mainly a-axis-oriented (TF1) or a combination of a- and…
Lanthanum-based compounds are cornerstones of superconductivity research, yet the La-5d orbitals typically remain empty spectator states far above the Fermi level (EF). While superconductivity has been induced in LaO up to 5.37 K in tensile…
Thin films of transition metal oxides open up a gateway to nanoscale electronic devices beyond silicon characterized by novel electronic functionalities. While such films are commonly prepared in an oxygen atmosphere, they are typically…
Strain engineering of functional properties in epitaxial thin films of strongly correlated oxides exhibiting octahedral-framework structures is hindered by the lack of adequate misfit relaxation models. Here we present unreported…
Titanium nitride (TiN) presents superior electrical conductivity with mechanical and chemical stability and compatibility with the semiconductor fabrication process. Here, we fabricated epitaxial and polycrystalline TiN (111) thin films on…
Three different film systems have been systematically investigated to understand the effects of strain and substrate constraint on the phase transitions of perovskite films. In SrTiO$_3$ films, the phase transition temperature T$_C$ was…
We report on low-temperature MOVPE growth of silicon delta-doped \b{eta}-Ga2O3 films with low FWHM. The as-grown films are characterized using Secondary-ion mass spectroscopy, Capacitance-Voltage and Hall techniques. SIMS measurements show…
While structure refinement is routinely achieved for simple bulk materials, the accurate structural determination still poses challenges for thin films due on the one hand to the small amount of material deposited on the thicker substrate…
The growth mechanisms of MgB2 films obtained by different methods on various substrates are compared via a detailed cross-sectional scanning electron microscopy (SEM) study. The analyzed films include (a) samples obtained by an ex-situ…