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The surface states of a 3D topological insulator (TI) exhibit topological protection against backscattering. However, the contribution of bulk electrons to the transport data is an impediment to the topological protection of surface. We…

Strongly Correlated Electrons · Physics 2016-12-02 R. K. Gopal , Sourabh Singh , Arpita Mandal , Jit Sarkar , Chiranjib Mitra

In ideal topological insulator (TI) films the bulk state, which is supposed to be insulating, should not provide any electric coupling between the two metallic surfaces. However, transport studies on existing TI films show that the…

Materials Science · Physics 2014-10-21 Matthew Brahlek , Nikesh Koirala , Maryam Salehi , Namrata Bansal , Seongshik Oh

Three-dimensional (3D) topological insulators (TIs) are new forms of quantum matter that are characterized by their insulating bulk state and exotic metallic surface state, which hosts helical Dirac fermions1-2. Very recently, BiTeCl, one…

Strongly Correlated Electrons · Physics 2014-01-28 F. X. Xiang , X. L. Wang , S. X. Dou

The paradigm of classifying three-dimensional (3D) topological insulators into strong and weak ones (STI and WTI) opens the door for the discovery of various topological phases of matter protected by different symmetries and defined in…

The newly-discovered three-dimensional strong topological insulators (STIs) exhibit topologically-protected Dirac surface states. While the STI surface state has been studied spectroscopically by e.g. photoemission and scanned probes,…

Mesoscale and Nanoscale Physics · Physics 2012-06-05 Dohun Kim , Sungjae Cho , Nicholas P. Butch , Paul Syers , Kevin Kirshenbaum , Shaffique Adam , Johnpierre Paglione , Michael S. Fuhrer

In an ideal 3D topological insulator (TI), the bulk is insulating and the surface conducting due to the existence of metallic states that are localized on the surface; these are the topological surface states. Quaternary Bi-based compounds…

In an ideal bulk topological-insulator (TI) conducting surface states protected by time reversal symmetry enfold an insulating crystal. However, the archetypical TI, Bi2Se3, is actually never insulating; it is in fact a relatively good…

Mesoscale and Nanoscale Physics · Physics 2014-03-07 E. Lahoud , E. Maniv , M. Petrushevsky , M. Naamneh , A. Ribak , S. Wiedmann , L. Petaccia , K. B. Chashka , Y. Dagan , A. Kanigel

Topological insulators (TI) are a phase of matter that host unusual metallic states on their surfaces. Unlike the states that exist on the surface of conventional materials, these so-called topological surfaces states (TSS) are protected…

Topological insulators (TIs) are predicted to be composed of an insulating bulk state along with conducting channels on the boundary of the material. In Bi2Se3, however, the Fermi level naturally resides in the conduction band due to…

Materials Science · Physics 2011-08-03 Matthew Brahlek , Yong Seung Kim , Namrata Bansal , Eliav Edrey , Seongshik Oh

Three-dimensional (3-D) topological insulators (TI) are characterized by the presence of metallic surface states and a bulk band gap. Recently theoretical and experimental studies have shown an induced gap in the surface state bands of TI…

Mesoscale and Nanoscale Physics · Physics 2012-12-21 Jiwon Chang , Leonard F. Register , Sanjay K. Banerjee

Three-dimensional topological insulators are classified into "strong" (STI) and "weak" (WTI) according to the nature of their surface states. While the surface states of the STI are topologically protected from localization, this does not…

Materials Science · Physics 2012-07-04 Zohar Ringel , Yaacov E. Kraus , Ady Stern

The massless Dirac fermions residing on the surface of three-dimensional topological insulators are protected from backscattering and cannot be localized by disorder, but such protection can be lifted in ultrathin films when the…

Mesoscale and Nanoscale Physics · Physics 2015-06-04 A. A. Taskin , Satoshi Sasaki , Kouji Segawa , Yoichi Ando

We study coherent transport in density tunable micro-devices patterned from thin films of the topological insulator (TI) Bi2Se3. The devices exhibit pronounced electric field effect, including ambipolar modulation of the resistance with an…

Mesoscale and Nanoscale Physics · Physics 2012-01-19 Hadar Steinberg , Jean-Baptiste Laloë , Valla Fatemi , Jagadeesh S. Moodera , Pablo Jarillo-Herrero

Topological insulators (TI) are a new class of quantum materials with insulating bulk enclosed by topologically protected metallic boundaries. The surface states of three-dimensional TIs have spin helical Dirac structure, and are robust…

Topological insulators (TIs) are new insulating materials with exotic surface states, where the motion of charge carriers is described by the Dirac equations and their spins are locked in a perpendicular direction to their momentum. Recent…

Mesoscale and Nanoscale Physics · Physics 2014-05-01 Fei-Xiang Xiang , Xiao-Lin Wang , Shi-Xue Dou

Topological insulators (TI), with characteristic Dirac-fermion topological surface states (TSS), have emerged as a new class of electronic materials with rich potentials for both novel physics and device applications. However, a major…

Materials Science · Physics 2014-09-11 Helin Cao , Chang Liu , Jifa Tian , Yang Xu , Ireneusz Miotkowski , M. Zahid Hasan , Yong P. Chen

Three-dimensional (3D) topological insulators (TIs) are known to carry 2D Dirac-like topological surface states in which spin-momentum locking prohibits backscattering. When thinned down to a few nanometers, the hybridization between the…

Topological insulators are a recently discovered class of materials with fascinating properties: While the inside of the solid is insulating, fundamental symmetry considerations require the surfaces to be metallic. The metallic surface…

Low-field magnetotransport measurements of topological insulators such as Bi$_2$Se$_3$ are important for revealing the nature of topological surface states by quantum corrections to the conductivity, such as weak-antilocalization. Recently,…

(Bi$_{1-x}$Sb$_x$)$_2$Te$_3$ alloys are non-degenerate topological insulators (TIs) whose Dirac point (DP) can be tuned within the bulk bandgap by varying the composition, effectively reducing bulk conduction while allowing surface carrier…

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