Related papers: Universal scheme to generate metal-insulator trans…
The insulating state of matter can be probed by means of a ground state geometrical marker, which is closely related to the modern theory of polarization (based on a Berry phase). In the present work we show that this marker can be applied…
In the absence of magnetic field or spin-orbit coupling the one-parameter scaling theory predicts localization of all states in two-dimensional (2D) disordered systems, for any amount of disorder. However, a 2D metallic phase has been…
We study the distributions of the normalized resonance widths ${\cal P} ({\tilde \Gamma})$ and delay times ${\cal P} ({\tilde \tau})$ for $3$D disordered tight-binding systems at the metal-insulator transition (MIT) by attaching leads to…
We study the level-statistics of a disordered system undergoing the Anderson type metal-insulator transition. The disordered Hamiltonian is a sparse random matrix in the site representation and the statistics is obtained by taking an…
We investigated the interdependence of the effects of disorder and carrier correlations on the metal-insulator transition in two-dimensional electronic systems. We present a quantitative metal-insulator phase diagram. Depending on the…
We examined the characteristics of a metal-insulator transition on a two-dimensional non-bipartite lattice when both disorders and electron interactions are present. Using a real-space renormalization group method and finite-size scaling…
We study the effect of infinitesimal onsite disorder on d-dimensional all bands flat lattices. The lattices are generated from diagonal Hamiltonians by a sequence of (d + 1) local unitary transformations parametrized by angles ${\theta}_i$.…
We investigate a disordered two-dimensional lattice model for noninteracting electrons with long-range power-law transfer terms and apply the method of level statistics for the calculation of the critical properties. The eigenvalues used…
Self-consistent theory of electron localization in disordered systems is generalized for the case of interacting electrons. We propose and critically compare a number of possible self-consistency schemes which take into account the lowest…
We investigate the metal insulator transitions at finite temperature for the Hubbard model with diagonal alloy disorder. We solve the dynamical mean field theory equations with the non crossing approximation and we use the coherent…
The recent experimental observation of a metal-insulator transition in two dimensions prompts a re-examination of the theory of disordered interacting systems. We argue that the existing theory permits the existence of a metallic phase and…
We obtain analytically a continuum of one-dimensional ballistic extended states in a two-dimensional disordered system, which consists of compactly coupled random and pure square lattices. The extended states give a marginal metallic phase…
Metal-insulator transitions driven by disorder (Delta) and/or by electron correlations (U) are investigated within the Anderson-Hubbard model with local binary-alloy disorder using a simple but consistent mean-field approach. The Delta-U…
A new two-pole approximation, which allows to describe the transition from an insulating state to a metallic one at increase of bandwidth, and also the observable in some compounds transition from a metalic state to an insulating one with…
We reexamine the problem of delocalization of two-dimensional electrons in the presence of random magnetic field. By introducing spatial correlations among random fluxes, a well-defined metal-insulator transition characterized by a…
We examine the impact of non-magnetic disorder on the electronic states of a multilayer structure comprising layers of both topological and conventional band insulators. Employing the Burkov-Balents model with renormalized tunneling…
We study the localization properties of a test dipole feeling the disordered potential induced by dipolar impurities trapped at random positions in an optical lattice. This random potential is marked by correlations which are a convolution…
Moir\'e superlattices formed in two-dimensional semiconductor heterobilayers provide a new realization of Hubbard model physics in which the number of electrons per effective atom can be tuned at will. We report on an exact diagonalization…
We use the semiclassical approach combined with the scaling results for the diffusion coefficient to consider the two-level correlation function $R(\varepsilon)$ for a disordered electron system in the crossover region, characterized by the…
We develop a mean-field theory of the metallic phase near the many-body localization (MBL) transition, using the observation that a system near the MBL transition should become an increasingly slow heat bath for its constituent parts. As a…