Related papers: Hanle effect missing in a prototypical organic spi…
Hanle magnetoresistance (HMR) is a type of magnetoresistance where interplay of the spin Hall effect, Hanle-type spin precession, and spin-dependent scattering at the top/bottom surfaces in a heavy metal controls the effect. In this study,…
Antiferromagnetic materials host pairs of spin-up and spin-down magnons which can be described in terms of a magnonic pseudospin. The close analogy between this magnonic pseudospin systems and that of electronic charge carriers led to the…
A longstanding goal of research in semiconductor spintronics is the ability to inject, modulate, and detect electron spin in a single device. A simple prototype consists of a lateral semiconductor channel with two ferromagnetic contacts,…
The interaction between the itinerant spins in metals and localized spins in magnetic insulators thus far has only been explored in collinear spin systems, such as garnets. Here, we report the spin-Hall magnetoresistance (SMR) sensitive to…
Magnetoresistance (MR) provides a crucial tool for experimentally studying spin torques. While MR is well established in the device geometry of the spin Hall effect (SHE), as exemplified by the magnet/heavy-metal heterostructures, its role…
Valley-spin coupling in transition-metal dichalcogenides (TMDs) can result in unusual spin transport behaviors under an external magnetic field. Nonlocal resistance measured from 2D materials such as TMDs via electrical Hanle experiments…
Electrical spin orientation is the generation of electron spin proportional to the electric current. This phenomenon is allowed by symmetry in gyrotropic systems, e.g. in inversion-asymmetric structures with Rashba spin-orbit splitting.…
Antiferromagnetic materials promise improved performance for spintronic applications, as they are robust against external magnetic field perturbations and allow for faster magnetization dynamics compared to ferromagnets. The direct…
The precession of electron spins in a perpendicular magnetic field, the so called Hanle effect, provides an unique insight into spin properties of a non-magnetic material. In practice, the spin signal is fitted to the analytic solution of…
Resistance between two ferromagnetic electrodes coupled to a normal channel depends on their relative magnetizations. The spin-dependent component, R, of the resistance changes with magnetic field, B, normal to the directions of…
We generalize the diffusive model for spin injection and detection in nonlocal spin structures to account for spin precession under an applied magnetic field in an anisotropic medium, for which the spin lifetime is not unique and depends on…
Injection, transmission, and detection of spins in a conducting channel are the basic ingredients of spintronic devices. Long spin lifetimes during transit are an important ingredient in realizing this technology. An attractive platform for…
In easy-plane antiferromagnets, the nature of the elementary excitations of the spin system is captured by the precession of the magnon pseudospin around its equilibrium pseudofield, manifesting itself in the magnon Hanle effect. Here, we…
In the field of spintronics the "conductivity mismatch" problem remains an important issue. Here the difference between the resistance of ferromagnetic electrodes and a (high resistive) transport channel causes injected spins to be…
The giant magnetoresistance with a huge hysteresis is observed in the organic metal k-(BEDTTTF)2Hg(SCN)2Br at low temperature in a pressure interval around 3 kbar of a width ~1 kbar. The hysteretic magnetoresistance is isotropic with…
It is shown that in spin injection experiments the interplay between external magnetic field and alternating current can be observed already on a single ferromagnet/normal metal interface. The interface resistance is predicted to exhibit…
We have investigated the electrical Hanle effect with magnetic fields applied at an oblique angle ({\theta}) to the spin direction (the oblique Hanle effect, OHE) in CoFe/MgO/semiconductor (SC) contacts by employing a three-terminal…
Motivated by the recently discovered magnonic Hanle effect in an insulating antiferromagnet [Wimmer et al., Phys. Rev. Lett. 125, 247204 (2020)], we develop a spin transport theory based on low-energy waves of antiferromagnetic N\'eel…
The underlying physics of the inverted Hanle effect appearing in Si was experimentally investigated using a Si spin valve, where spin transport was realized up to room temperature. No inverted-Hanle-related signal was observed in a…
Resistance as a function of temperature down to 20mK and magnetic fields up to 18T for various carrier concentrations is measured for nanowires made from the SrTiO3/LaAlO3 interface using a hard mask shadow deposition technique. The narrow…