Related papers: Electron tunneling in chaotic InAs/GaAs quantum ri…
In a two-dimensional quantum dot in a GaAs heterostructure, the spin-orbit scattering rate is substantially reduced below the rate in a bulk two-dimensional electron gas [B.I. Halperin et al, Phys. Rev. Lett. 86, 2106 (2001)]. Such a…
The experimentally observed correlated insulating states and quantum anomalous Hall (QAH) effect in twisted bilayer graphene (TBG) have drawn significant attention. However, up to date, the specific mechanisms of these intriguing phenomena…
We study the two-qubit controlled-not gate operating on qubits encoded in the spin state of a pair of electrons in a double quantum dot. We assume that the electrons can tunnel between the two quantum dots encoding a single qubit, while…
We use semiconductors as an example to show that quantum chaos manifests itself in the energy spectrum of crystals. We analyze the {\it ab initio} band structure of silicon and the tight-binding spectrum of the alloy $Al_xGa_{1-x}As$, and…
We report on the experimental study of the spectral properties of quantum systems consisting of two quantum billiards (QBs), one with chaotic, the other one with integrable classical dynamics, that are coupled to each other via an opening…
We analyze the recently observed breakdown of the integer quantum Hall effect in a two-dimensional electron gas embedded in a metallic split-ring resonator. By accounting for both the quantized vacuum field and electrostatic boundary…
Analytical expressions for the width and conductance peak distributions of irregularly shaped quantum dots in the Coulomb blockade regime are presented in the limits of conserved and broken time-reversal symmetry. The results are obtained…
We report low-dimensional tunneling in an independently contacted vertically coupled quantum wire system. This nanostructure is fabricated in a high quality GaAs/AlGaAs parallel double quantum well heterostructure. Using a novel flip chip…
Two tunnel-coupled few-electron quantum dots were fabricated in a GaAs/AlGaAs quantum well. The absolute number of electrons in each dot could be determined from finite bias Coulomb blockade measurements and gate voltage scans of the dots,…
We identify the physics behind the results of recent measurements [W. Kang et al., Nature 403, 59 (2000)] of electron transfer between the edges of two two-dimensional electron systems (2DES). We find that a consistent explanation of all of…
We have experimentally investigated the hole states in a gated vertical strained Si/SiGe quantum dot. We demonstrate the inhomogeneous strain relaxation on the lateral surface creates a ring-like potential near the perimeter of the dot,…
Tunneling of fractionally charged quasi-particles (QPs) through a barrier is considered in the context of a multiply connected geometry. In this geometry global constraints do not prohibit such a tunneling process. The tunneling amplitude…
Two laterally adjacent quantum Hall systems separated by an extended barrier of a thickness on the order of the magnetic length possess a complex Landau band structure in the vicinity of the line junction. The energy dispersion is obtained…
The tilting angular dependence of the energy gap was measured in the bilayer quantum Hall state at the Landau level filling $\nu=1$ by changing the density imbalance between the two layers. The observed gap behavior shows a continuous…
This work presents a theoretical study of the energy spectrum of GaAs/AlGaAs concentric double quantum rings, under an applied magnetic field directed perpendicular to the ring plane. The Schrodinger equation for this system is solved in a…
Superconducting qubits already demonstrated potential in emulating coherent back scattering or weak localization (WL) and tunnelling phenomena however, in a real multipath system they have not been verified yet.Here we show how a…
We argue that the tunneling between two 2D electron gases in a weak magnetic field is of resonance character, and involves a long lifetime excitonic state of an electron and hole {\it uniformly spread} over cyclotron orbits. We find that…
Electron correlation and topology are two central threads of modern condensed matter physics. Semiconductor moir\'e materials provide a highly tunable platform for studies of electron correlation. Correlation-driven phenomena, including the…
In In_xGa_{1-x}As/n-GaAs double quantum wells (DQWs) containing an electron gas, the magnetoresistance (MR) peculiarities under parallel magnetic fields caused by the passing of the tunnel gap edges through the Fermi level are revealed.…
We explore the characteristics of equilibrium tunneling of electrons from a 3D electrode into a high mobility 2D electron system. For most 2D Landau level filling factors, we find that tunneling can be characterized by a single,…