Related papers: Electronic transport in two dimensional Si:P $\del…
We have investigated the time-modulated coherent quantum transport phenomena in a ballistic open quantum dot. The conductance $G$ and the electron dwell time in the dots are calculated by a time-dependent mode-matching method. Under…
Nanoscale electronic transport is of intense technological interest, with applications ranging from semiconducting devices and molecular junctions to charge migration in biological systems. Most explicit theoretical approaches treat…
For five different electron and hole systems in two dimensions (Si MOSFET's, p-GaAs, p-SiGe, n-GaAs and n-AlAs), the critical density, $n_c$ that marks the onset of strong localization is shown to be a single power-law function of the…
Gated molybdenum disulphide (MoS2) exhibits a rich phase diagram upon increasing electron doping, including a superconducting phase, a polaronic reconstruction of the bandstructure, and structural transitions away from the 2H polytype. The…
We report the transport characteristics of both electrons and holes through narrow constricted crystalline Si "wall-like" long-channels that were surrounded by a thermally grown SiO2 layer. Importantly, as a result of the existence of fixed…
We study the electronic transport properties of dual-gated bilayer graphene devices. We focus on the regime of low temperatures and high electric displacement fields, where we observe a clear exponential dependence of the resistance as a…
The carrier mobility of anisotropic two-dimensional (2D) semiconductors under longitudinal acoustic (LA) phonon scattering was theoretically studied with the deformation potential theory. Based on Boltzmann equation with relaxation time…
We report transport properties of single-crystalline Pd$_{3}$Bi$_{2}$S$_{2}$, which has been predicted to host an unconventional electronic phase of matter beyond three-dimensional Dirac and Weyl semimetals. Similar to several topological…
It is known that carrier mobility in layered semiconductors generally increases from two-dimension (2D) to three-dimension due to suppressed scattering channels resulting from decreased densities of electron and phonon states. In this work,…
We calculate the mobility of a two-dimensional electron gas residing at the interface of LaAlO$_{3}$/SrTiO$_{3}$ following a three band Boltzmann approach at low temperature, where carrier-charged impurity scattering process is assumed to…
Commensurability oscillations in the magnetoresistivity of a two-dimensional electron gas in a two-dimensional lateral superlattice are studied in the framework of quasiclassical transport theory. It is assumed that the impurity scattering…
Charge transport in amorphous semiconductors having spatially correlated exponential density of states (DOS) has been considered for the arbitrary behavior of the correlation function of random energies. Average carrier velocity is exactly…
Low temperature carrier transport properties in two-dimensional (2D) semiconductor systems can be theoretically well-understood within a mean-field type RPA-Boltzmann theory as being limited by scattering from screened Coulomb disorder…
We consider theoretically effects of random charged impurity disorder on the {\it quality} of high-mobility two dimensional (2D) semiconductor structures, explicitly demonstrating that the sample mobility is not necessarily a reliable or…
We study numerically an electronic transport in strongly anisotropic weakly disorderd two-dimensional systems. We find that the conductance distribution is gaussian but the conductance fluctuations increase when anisotropy becomes stronger.…
The deposition of a high-$\kappa$ oxide overlayer is known to significantly enhance the room-temperature electron mobility in single-layer MoS$_{2}$ (SLM) but not in single-layer graphene (SLG). We give a quantitative account of how this…
Topological nodal-line semimetals are characterized by symmetry-protected one-dimensional band-touching lines or loops, which give rise to their peculiar Fermi surfaces at low energies. Furthermore, if time-reversal or inversion symmetry…
We present a unified calculation method for variable range hopping transport with a varying charge concentration and a varying applied electrical field. We demonstrate that the major differences between the transport properties measured at…
Here we study the single-particle, electronic transport and optical properties of a gapped system described by a simple two-band Hamiltonian with inverted valence bands. We analyze its properties in the three-dimensional (3D) and the…
We present a two-dimensional electron heterostructure field effect device of simplistic design and ease of fabrication that displays high mobility electron transport. This is accomplished using a high efficacy contacting scheme and simple…