Related papers: Mn Solid Solutions in Self-Assembled Ge/Si (001) Q…
The structural analysis of GaN and Al$_x$Ga$_{1-x}$N/GaN heterostructures grown by metalorganic vapor phase epitaxy in the presence of Mn reveals how Mn affects the growth process, and in particular the incorporation of Al, the morphology…
The magnetic and electrical transport properties of Mn-doped amorphous silicon (\textit{a-}Mn$_{x}$Si$_{1-x}$) thin films have been measured. The magnetic susceptibility obeys the Curie-Weiss law for a wide range of $x$ (0.005-0.175) and…
Thick metamorphic buffers are perceived to be indispensable for the heteroepitaxial integration of III-V semiconductors on silicon substrates with large thermal expansion and lattice mismatches. However, III-nitride buffers in conventional…
The electronic and magnetic properties of a new diluted magnetic semiconductor (DMS) Ba$_{1-x}$K$_{x}$(Zn$_{1-y}$Mn$_{y}$)$_{2}$As$_{2}$, which is isostructural to so-called 122-type Fe-based superconductors, are investigated by x-ray…
A simple, single-color method for permanent marking of the position of individual self-assembled semiconductor Quantum Dots (QDs) at cryogenic temperatures is reported. The method combines in situ photolithography with standard…
Large area epitaxy of two-dimensional (2D) layered materials with high material quality is a crucial step in realizing novel device applications based on 2D materials. In this work, we report high-quality, crystalline, large-area gallium…
We report the formation of Mn-rich regions at the interface of Co2FexMn1-xSi thin films grown on GaAs substrates by molecular beam epitaxy (MBE). Scanning transmission electron microscopy (STEM) with electron energy loss (EEL) spectrum…
We report on the magnetic and structural properties of Ar and Mn implanted InAs epitaxial films grown on GaAs (100) by Molecular Beam Epitaxy (MBE) and the effect of Rapid Thermal Annealing (RTA) for 30 seconds at 750C. Channeling Particle…
The morphological evolution and the effect of growth temperature on size, orientation and composition of molecular beam epitaxy grown Ge-Si islands on Si(5 5 12) surfaces have been investigated in the temperature range from room temperature…
We theoretically study the stability of the solidified second-layer 3He at 4/7 of the first-layer density adsorbed on graphite, which exhibits quantum spin liquid. We construct a lattice model for the second-layer 3He by taking account of…
Real time electron microscopy observation on morphological changes in gold nano structures deposited on Si (100) surfaces as a function of annealing temperatures has been reported. Two types of interfaces with the substrate silicon were…
The spin states at the surface of epitaxial thin films of hematite, both undoped and doped with 1% Ti, Sn or Zn, respectively, were probed with x-ray magnetic linear dichroism (XMLD) spectroscopy. Morin transitions were observed for the…
The terahertz spectra of the dynamic conductivity and radiation absorption coefficient in germanium-silicon heterostructures with arrays of Ge hut clusters (quantum dots) have been measured for the first time in the frequency range of…
Considerable efforts have been devoted recently to synthesize diluted magnetic semiconductors having ferromagnetic properties at room temperature because of their technological impacts for spintronic devices. In 2001 successful growth of…
We show that CdMnTe self-assembled quantum dots can be formed by depositing a submonolayer of Mn ions over a ZnTe surface prior to deposition of the CdTe dot layer. Single dot emission lines and strongly polarized quantum dot…
We report the synthesis of colloidal Mn2+-doped ZnO (Mn2+:ZnO) quantum dots and the preparation of room-temperature ferromagnetic nanocrystalline thin films. Mn2+:ZnO nanocrystals were prepared by a hydrolysis and condensation reaction in…
In this study we numerically calculate the spatial profile of mechanical strain on self-assembled germanium (Ge) quantum dots (QDs) grown on a silicon (Si) substrate. Although the topic has been exhaustively studied, interesting features…
We investigate ultrathin superconducting TiN films, which are very close to the localization threshold. Perpendicular magnetic field drives the films from the superconducting to an insulating state, with very high resistance. Further…
Semiconductor quantum dots have emerged as promising candidates for implementation of quantum information processing since they allow for a quantum interface between stationary spin qubits and propagating single photons. In the meanwhile,…
Large-area high density patterns of quantum dots with a diameter of 200 nm have been prepared from a series of four Zn_{0.93}Mn_{0.07}Te/ZnTe multiple quantum well structures of different well width (4 nm, 6 nm, 8 nm and 10 nm) by electron…