Related papers: Temperature-dependent electron mobility in InAs na…
Motivated by recent experiments on electric transport through single molecules and quantum dots, we investigate a model for transport that allows for significant coupling between the electrons and a boson mode isolated on the molecule or…
Angular momentum transport in magnetic multilayered structures plays a central role in spintronic physics and devices. The angular momentum currents or spin currents are carried by either quasi-particles such as electrons and magnons, or by…
The magnetotransport in phase-separated (Ga,Fe)N containing $\gamma$'-Ga$_y$Fe$_{4-y}$N (0\,$<$\,y\,$<$1) nanocrystals (NCs) is studied in the temperature range between 2\,K and 300\,K. The evolution of the resistivity and of the…
Detailed experimental and theoretical studies of the temperature dependence of the effect of different scattering mechanisms on electrical transport properties of graphene devices are presented. We find that for high mobility devices the…
We determine the temperature profile in magnetic nanocontacts submitted to the very large current densities that are commonly used for spin-torque oscillator behavior. Experimentally, the quadratic current-induced increase of the resistance…
We have employed noise thermometry for investigations of thermal relaxation between the electrons and the substrate in nanowires patterned from 40-nm-thick titanium film on top of silicon wafers covered by a native oxide. By controlling the…
The conductivity $\sigma$ and carrier density $n$ of the conducting polymer polyaniline were investigated by changing the concentration $x$ of a secondary dopant, meta-cresol. We found that $\sigma$ changes by four orders of magnitude…
The temperature dependence of the electrical transport of a individual tin oxide nanobelt was measured, in darkness, from 400 to 5K. We found four intrinsic electrical transport mechanisms through the nanobelt. It starts with…
Temperature dependent transport of disordered electronic systems is examined in the presence of strong correlations. In contrast to what is assumed in Fermi liquid approaches, finite temperature behavior in this regime proves largely…
The transport properties of high-performance thin-film transistors (TFT) made with a regio-regular poly(thiophene) semiconductor (PQT-12) are reported. The room-temperature field-effect mobility of the devices varied between 0.004 cm2/V s…
The temporal evolution of quantal Joule heating of 2D electrons in GaAs quantum well placed in quantizing magnetic fields is studied using a difference frequency method. The method is based on measurements of the electron conductivity…
We investigate the quantum transport properties of surface electrons on a topological insulator Bi2Te3 nanowire in a magnetotransport study. Although the nanowires are synthesized by using a relatively coarse method of electrochemical…
In this Letter, four-point magnetotransport of high mobility InGaAs/InP heterointerfaces is measured from 1.6 K to 300 K and from 0 to 15 T, and an analysis is shown whereby the mobility and density of the two-dimensional (2D) accumulation…
We performed electronic transport measurements on 1D InAs quantum wires. In sufficiently disordered wires, transport is dominated by Coulomb blockade, and the conductance can be well described by tunneling through a quantum dot embedded…
We show that resonant electron transport in semiconductor superlattices with an applied electric and tilted magnetic field can, surprisingly, become more pronounced as the lattice and conduction electron temperature increases from 4.2 K to…
Since the discovery of the giant magnetoresistance (GMR) effect the use of the intrinsic angular momentum of the electrons has opened up new spin based device concepts. The two channel model of spin-up and spin-down electrons with…
We investigate the transport characteristics of Ge/Si-Core/Shell nanowire with Coulomb Blockade in presence of external magneto-electric fields from a theoretical basis. Using the effective Luttinger-Kohn Hamiltonian we calculate the…
In this paper we present our progress towards the opto-electronic characterization of indium phosphide (InP) nanowire transistors at milli-Kelvin (mK) temperatures. First, we have investigated the electronic transport of the InP nanowires…
The parallel magnetic field tuned two-dimensional superconductor-insulator transition has been investigated in ultrathin films of amorphous Bi. The resistance is found to be independent of temperature on both sides of the transition below…
The measurement of resistivity across a wide temperature range - from 15 to 1473 K - in rare-earth manganite series of compounds reveals a very interesting feature : normally observed insulating pattern beyond Tc (Curie Point) gives way to…