Related papers: Potential-driven eddy current in rippled graphene …
Magnetic trapping potentials for atoms on atom chips are determined by the current flow in the chip wires. By modifying the shape of the conductor we can realize specialized current flow patterns and therefore micro-design the trapping…
Graphene is an ideal material for spin transport as very long spin relaxation times and lengths can be achieved even at room temperature. However, electrical spin injection is challenging due to the conductivity mismatch problem. Spin…
A massive quantum particle on a two-dimensional curved surface experiences a surface-geometry induced attractive potential that is characterized by the radii of curvature at a given point. With bilayer graphene sheets and carbon…
Thermoelectric junctions are often made of components of different materials characterized by distinct transport properties. Single material junctions, with the same type of charge carriers, have also been considered to investigate various…
A system similar to gapped graphene (for example, fluorinated) containing two or more electron valleys is considered. It is assumed that the material has a sector cut and is deformed in the plane and the the cut edges are connected to form…
The interaction between planar quasiparticles in a dx2-y2 superconductor and quantized vortices associated with a magnetic field perpendicular to the plane is shown to induce a pair potential with dxy symmetry, out a phase with dx2-y2…
The stationary current induced by a strong running potential wave in one-dimensional system is studied. Such a wave can result from illumination of a straight quantum wire with special grating or spiral quantum wire by circular-polarized…
Spin electronic structure of graphene pi-states and Pt 5d-states for the Graphene/Pt interface has been investigated. Here, we report a large induced spin-orbit splitting (~70-100 meV) of graphene pi-states with formation of non-degenerated…
The electronic properties of low-dimensional materials can be engineered by doping, but in the case of graphene nanoribbons (GNR) the proximity of two symmetry-breaking edges introduces an additional dependence on the location of an…
Graphene nanoribbons (GNRs), low-dimensional platforms for carbon-based electronics, show the promising perspective to also incorporate spin polarization in their conjugated electron system. However, magnetism in GNRs is generally…
The absence of a band gap in graphene restricts its straight forward application as a channel material in field effect transistors. In this letter, we report on a new approach to engineer a band gap in graphene field effect devices (FED) by…
The design and fabrication of robust metallic states in graphene nanoribbons (GNRs) is a significant challenge since lateral quantum confinement and many-electron interactions tend to induce electronic band gaps when graphene is patterned…
We present an analytical theory for the gate electrostatics and the classical and quantum capacitance of the graphene nanoribbons (GNRs) and compare it with the exact self-consistent numerical calculations based on the tight-binding…
Confinement of electrons in graphene to make devices has proven to be a challenging task. Electrostatic methods fail because of Klein tunneling, while etching into nanoribbons requires extreme control of edge terminations, and bottom-up…
Nonlinear Hall-like currents can be generated by a time-periodic alternating bias on two-dimensional (2D) materials lacking inversion symmetry. To hint that the moir\'e between graphene and its supporting substrate contributes to the…
Superconducting films in perpendicular magnetic field are found to rectify alternating currents. The effect has been observed both in plain and nanostructured superconducting films (niobium and lead). The rectified voltage appears both…
We propose two schemes of field-effect transistor based on gapped armchair graphene nanoribbons connected to metal leads, by introducing sidearms or on-site gate voltages. We make use of the band gap to reach excellent switch-off character.…
Graphene nanoribbons (GNRs) with widths down to 16 nm have been characterized for their current-carrying capacity. It is found that GNRs exhibit an impressive breakdown current density, on the order of 10^8 A/cm2. The breakdown current…
Static electric fields can be configured to guide charged nanoparticles along the electric field lines. Some field line configurations can focus the nanoparticles to prescribed places thus acting as electric funnels. Despite the importance…
A spin field effect transistor (FET) is proposed by utilizing a graphene nanoribbon as the channel. Similar to the conventional spin FETs, the device involves ferromagnetic metals as a source and drain; they, in turn, are connected to the…