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The structure property of non-ideal Si/GaAs heterostructures that were integrated with the ultra-thin oxide (UO) tunneling interfacial layer has been systematically investigated. Si nanomembranes (NMs) were oxidized in different time…
Within the context of superconducting gap engineering, Al-\alox-Al tunnel junctions have been used to study the variation in superconducting gap, $\Delta$, with film thickness. Films of thickness 5, 7, 10 and 30 nm were used to form the…
We report observations of unusual normal-state electronic conduction properties and superconducting characteristics of high-quality CoSi$_2$/Si films grown on silicon Si(100) and Si(111) substrates. A good understanding of these features…
The interplay between superconductivity and the pseudogap is an important aspect of cuprate physics. However, the nature of the pseudogap remains controversial, in part because different experiments have suggested different gap functions.…
Gallium chalcogenides are promising building blocks for novel van der Waals heterostructures. We report low-temperature micro-photoluminescence (PL) of GaTe and GaSe films with thickness ranging from from 200 nm to a single unit cell. In…
Thin films composed of Ge nanocrystals embedded in amorphous SiO2 matrix (Ge-NCs TFs) were prepared using a low temperature in-situ growth method. Unexpected high p-type conductivity was observed in the intrinsic Ge-NCs TFs. Unintentional…
This work reports optical and electronic numerical modelling of a novel emerging structure which is the GaAs nanocrystal on Si tandem solar cell by epitaxial lateral overgrowth, a technique which allows defect free material growth. The…
When the electron density of highly crystalline thin films is tuned by chemical doping or ionic liq- uid gating, interesting effects appear including unconventional superconductivity, sizeable spin-orbit coupling, competition with…
The polarization discontinuity across interfaces in polar nitride-based heterostructures can lead to the formation of two-dimensional electron and hole gases. In the past, the observation of these electron and hole gases has been achieved…
The "metallic" regime of holes in GaAs/AlGaAs heterostructures corresponds to densities where two splitted heavy hole bands exist at a zero magnetic field. Using Landau fan diagrams and weak field magnetoresistance curves we extract the…
The development of integrated photonic circuits utilizing gallium phosphide requires a robust, scalable process for fabrication of GaP-on-insulator devices. Here we present the first GaP photonic devices on SiO$_2$. The process exploits…
Bipolar photoresponse - where photocurrent polarity reverses with excitation wavelength, gate voltage, or other conditions - is essential for optical logic, neuromorphic computing, and imaging. Unlike unipolar responses, bipolar behavior…
The nanoscale resistive switching characteristics of gallium phosphide (GaP) thin films directly grown on Si are investigated as a function of incident light. Firstly, as-grown GaP films show a high RON/ROFF (~10^4), shown to arise from the…
The band gap of SrTiO$_{3}$ retards its photocatalytic application. Regardless narrowing the band gap of the anion doped SrTiO$_{3}$, the anion doping structures have low photoconversion efficiency. The co-cation dopings are used to modify…
The DC and AC conductivities of the n-GaAs/AlAs heterostructure with two filled size quantization levels are studied within a wide magnetic field range. The electron spectrum of such heterostructure is characterized by two subbands…
A highly superlinear in radiation intensity photoconductance induced by terahertz laser radiation with moderate intensities has been observed in quantum point contacts made of GaAs quantum wells operating in the deep tunneling regime. For…
Samples of nitrogen-doped titanium dioxide (anatase, $0.2 \leq N \leq 1.0~wt\%$) prepared by the sol-gel method were investigated using X-band EPR spectroscopy, photoconductivity and photocatalysis measurements. $N\bullet$ and $NO\bullet$…
Vertical heterostructures combining different layered materials offer novel opportunities for applications and fundamental studies of collective behavior driven by inter-layer Coulomb coupling. Here we report heterostructures comprising a…
New generation Indium based lead-free Cs2InAgCl6 is a promising halide material in photovoltaic applications due to its good air stability and non-toxic behavior. But its wide band gap (>3 eV) is not suitable for solar spectrum and hence…
The observed correlation of oxygen vacancies and room temperature ferromagnetic ordering in Co doped ZnO1-o nanoparticles reported earlier (Naeem et al Nanotechnology 17, 2675-2680) has been further explored by transport and optical…