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Atomically flat thin films of topological insulator Bi2Se3 have been grown on double-layer graphene formed on 6H-SiC(0001) substrate by molecular beam epitaxy. By a combined study of reflection high energy electron diffraction and scanning…

Realizing topological superconductivity by integrating high-transition-temperature ($T_C$) superconductors with topological insulators can open new paths for quantum computing applications. Here, we report a new approach for increasing the…

Whereas SnTe is a inverted band gap topological crystalline insulator, the topological phase of the alloy Sn_{1-x}In_xTe, a topological superconductor candidate, has not been clearly studied so far. Our calculations show that the…

Materials Science · Physics 2019-08-19 Tome M. Schmidt , G. P. Srivastava

$V_2O_3$ has long been studied as a prototypical strongly correlated material. The difficulty in obtaining clean, well ordered surfaces, however, hindered the use of surface sensitive techniques to study its electronic structure. Here we…

Strong spin-orbit coupling, resulting in the formation of spin-momentum-locked surface states, endows topological insulators with superior spin-to-charge conversion characteristics, though the dynamics that govern it have remained elusive.…

We investigate the evolution of the electronic structure in SrRu_(1-x)Ti_xO_3 as a function of x using high resolution photoemission spectroscopy, where SrRuO3 is a weakly correlated metal and SrTiO3 is a band insulator. The surface spectra…

Strongly Correlated Electrons · Physics 2009-11-13 Kalobaran Maiti , Ravi Shankar Singh , V. R. R. Medicherla

We report on the insulator-to-metal transition in Se-hyperdoped Si layers driven by manipulating the Se concentration via non-equilibrium material processing, i.e. ion implantation followed by millisecond-flash lamp annealing. Electrical…

Materials Science · Physics 2017-10-11 F. Liu , S. Prucnal , Y. Berencén , Z. Zhang , Y. Yuan , Y. Liu , R. Heller , R. Boettger , L. Rebohle , W. Skorupa , M. Helm , S. Zhou

Thin (6-7 quintuple layer) topological insulator Bi2Se3 quantum dot devices are demonstrated using ultrathin (2~4 quintuple layer) Bi2Se3 regions to realize semiconducting barriers which may be tuned from Ohmic to tunneling conduction via…

Mesoscale and Nanoscale Physics · Physics 2012-01-19 Sungjae Cho , Dohun Kim , Paul Syers , Nicholas P. Butch , Johnpierre Paglione , Michael S. Fuhrer

Topological materials have been discovered so far largely by searching for existing compounds in crystallographic databases, but there are potentially new topological materials with desirable features that have not been synthesized. One of…

Materials Science · Physics 2022-09-21 Lin-Lin Wang

Topological insulators are bulk insulators with exotic surface states, protected under time-reversal symmetry, that hold promise in observing many exciting condensed-matter phenomena. In this report, we show that by having a topological…

Mesoscale and Nanoscale Physics · Physics 2019-10-29 S. Mathimalar , S. Sasmal , P. Rajasekhar , A. Bhardwaj , S. Chaudhary , B. Satpati , K. V. Raman

The topological properties of materials are, until now, associated with the features of their crystalline structure, although translational symmetry is not an explicit requirement of the topological phases. Recent studies of hopping models…

We use laser-based Angle-Resolved Photoemission Spectroscopy (ARPES) to study how chemical substitution modifies the electronic properties of the Bi2(Se{1-x}Tex)3 (BiSeTe) family of topological insulators. We find that increasing the Te…

Other Condensed Matter · Physics 2026-04-07 Maxwell Doyle , Benjamin Schrunk , D. L. Schlagel , Thomas A. Lograsso , Adam Kaminski

The integration of ferroelectric and topological materials offers a promising avenue for advancing the development of quantum material devices. In this work, we explore the strong coupling between topological states and ferroelectricity in…

Materials Science · Physics 2025-12-17 Jiaheng Li , Quansheng Wu , Hongming Weng

We introduce a dinstint approach to engineer a topologically protected surface state of a topological insulator. By covering the surface of a topological insulator, Bi2Te2Se, with a Bi monolayer film, the original surface state is…

Recent years have seen multiple high-throughput studies reveal an immense number of topological materials through use of symmetry indicators. Despite this success, three-dimensional topological insulators (TI) admitting a band-gap larger…

Materials Science · Physics 2023-04-13 Alexander C. Tyner , Pallab Goswami

Transient reflectivity measurements of thin films, ranging from 6 to 40 nm in thickness, of the topological insulator Bi2Se3 revealed a strong dependence of the carrier relaxation time on the film thickness. For thicker films the relaxation…

Mesoscale and Nanoscale Physics · Physics 2015-06-17 Yuri D. Glinka , Sercan Babakiray , Trent A. Johnson , Mikel B. Holcomb , David Lederman

Employing ab initio electronic calculations, we propose a new type of two-dimensional (2D) topological insulator (TI), monolayer (ML) low buckled (LB) mercury telluride (HgTe) and mercury selenide (HgSe), with tunable band gaps. Monolayer…

Mesoscale and Nanoscale Physics · Physics 2015-10-19 Jin Li , Chaoyu He , Lijun Meng , Huaping Xiao , Chao Tang , Xiaolin Wei , Jinwoong Kim , Nicholas Kioussis , G. Malcolm Stocks , Jianxin Zhong

The search for large band gap systems with dissipationless edge states is essential to developing materials that function under a wide range of temperatures. Two-dimensional (2D) topological insulators (TIs) have recently attracted…

Mesoscale and Nanoscale Physics · Physics 2018-10-10 Lauryn Wu , Kunming Gu , Qiliang Li

Many proposals to generate a time-reversal invariant topological superconducting phase are based on imposing a $\pi$ phase difference between the superconducting leads proximitizing a nanostructure. We show that this phase can be induced on…

Superconductivity · Physics 2019-05-01 Oscar E. Casas , Liliana Arrachea , William J. Herrera , Alfredo Levy Yeyati

The temperature renormalization of the bulk band structure of a topological crystalline insulator, SnTe, is calculated using first principles methods. We explicitly include the effect of thermal-expansion-induced modification of electronic…