Related papers: A gain-coefficient switched Alexandrite laser
We demonstrate a low noise, high-gain, resonant optical amplifier that combines injection locking with feed-forward cancellation of residual phase noise. The wavelength-agnostic architecture uses a commercial semiconductor diode laser as a…
A strong, far-detuned laser can shift the energy levels of an optically active quantum system via the AC Stark effect. We demonstrate that the polarization of the laser results in a spin-selective modification to the energy structure of a…
The semiconductor polariton laser promises a new source of coherent light, which, compared to conventional semiconductor photon lasers, has input-energy threshold orders of magnitude lower. However, intensity stability, a defining feature…
The scaling laws for laser wakefield acceleration in the nonlinear, self-guided regime [Lu et al. Phys. Rev. Spec. Top. Accel. Beams 10, 061301 (2007)] are examined in detail using the quasi-3D version of the particle-in-cell code OSIRIS.…
In this letter, we investigate a Yb-doped mode-locked fiber oscillator that uses coherent pulse division and recombination to avoid excessive nonlinear phase shifts. The mode-locking mechanism of the laser is based on the accumulation of a…
We report on a method of light-shift engineering where an auxiliary laser is used to tune the atomic transition frequency. The technique is used to selectively load a specific region of an optical lattice. The results are explained by…
A compact pulsed Nd:LuAG laser at 1064 nm based on the self-Q-switching technique is reported, having the output power as high as 6.61 W at the incident pump power of 21.32 W, corresponding to the optical conversion efficiency of ~31 %. The…
The lack of high power integrated lasers have been limiting silicon photonics. Despite much progress made in chip-scale laser integration, power remains below the level required for key applications. The main inhibiting factor for high…
We report a 2\mu m ultrafast solid-state Tm:Lu2O3 laser, mode-locked by single-layer graphene, generating transform-limited~410fs pulses, with a spectral width~11.1nm at 2067nm. The maximum average output power is 270mW, at a pulse…
We present an experimental and theoretical study on the gain mechanism in a photonic-crystal-cavity nanolaser with embedded quantum dots. From time-resolved measurements at low excitation power we find that four excitons are coupled to the…
We present an experimental implementation of a chirped mid-infrared (mid-IR) high-power laser source with variable center frequency between 4 THz to 30 THz and continuously tunable frequency sweep of up to 20 % within one pulse, with a…
We have developed a Watt-level random laser at 532 nm. The laser is based on a 1064 nm random distributed ytterbium-gain assisted fiber laser seed with a 0.35 nm line-width 900mW polarized output power. A study for the optimal length of the…
In a recent Letter [Appl. Phys. Lett. 82, 1015 (2003)], Williams et al. reported the development of a terahertz quantum cascade laser operating at 3.4 THz or 14.2 meV. We have calculated and analyzed the gain spectra of the quantum cascade…
Analytical theory of the high-power passively mode-locked laser with a slow absorber is developed. In distinguishing from previous treatment, our model is valid at pulse energies well exceeding the saturation energy of absorber. This is…
We report observation of kHz-pulsed-laser-accelerated electron energies up to 3 MeV in the -$k_\text{laser}$ (backward) direction from a 3 mJ laser interacting at normal incidence with a solid density, flowing-liquid target. The…
Multi-GeV-class laser plasma accelerating modules are key components of laser plasma accelerators, because they can be used as a booster of an upstream plasma or conventional injector or as modular acceleration sections of a multi-staged…
In this work, we report the use of commercial Gallium Nitride (GaN) power electronics to precisely switch complex distributed loads, such as electron lenses and deflectors, without impedance matching. Depending on the chosen GaN field…
Injecting spin-polarized carriers into semiconductor lasers provides important opportunities to extend what is known about spintronic devices, as well as to overcome many limitations of conventional (spin-unpolarized) lasers. By developing…
The laser-plasma accelerator has attracted great interest for constituting an alternative in the production of the relativistic electron beams of high peak current. But the generated electron beam has poor monochrome and emittance, which…
We demonstrate a compact source of energetic and phase-locked multi-terahertz pulses at a repetition rate of 190 kHz. Difference frequency mixing of the fundamental output of an Yb:KGW amplifier with the idler of an optical parametric…