Related papers: Low-Frequency Raman Modes and Electronic Excitatio…
It is now well established theoretically and experimentally that a moir\'e pattern, due to a rotation of two atomic layers with respect to each other, creates low-energy flat bands. First discovered in twisted bilayer graphene, these new…
Two magnon excitations and the nodal spin density wave (SDW) gap were observed in BaFe2As2 by Raman scattering. Below the SDW transition temperature (TSDW) nodal SDW gap opens together with new excitations in reconstructed electronic…
Quantum spin liquid (QSL), a state characterized by exotic low energy fractionalized excitations and statistics is still elusive experimentally and may be gauged via indirect experimental signatures. Remnant of QSL phase may reflect in the…
Theoretical work has suggested that monolayer MoS2 doped with Mn should behave as a two-dimensional dilute magnetic semiconductor, which would open up possibilities for spintronic applications, device physics, and novel ground states. The…
Low energy optical modes of MBE-grown In1-xGaxN thin films with different values of x are investigated using Raman spectroscopy. We also studied the influence of Raman excitation frequency using red and green lasers on scattering intensity…
We report ab-initio calculations of the phonon dispersion relations of the single-layer and bulk dichalcogenides MoS2 and WS2. We explore in detail the behavior of the Raman active modes, A1g and E2g as a function of the number of layers.…
We have performed polarized Raman scattering measurements on the newly discovered superconductor Ta$_{4}$Pd$_{3}$Te$_{16}$ ($T_c = 4.6$ K). We observe twenty-eight out of thirty-three Raman active modes, with frequencies in good accordance…
Intercalation offers a promising way to alter the physical properties of two-dimensional (2D) layered materials. Here we investigate the electronic and vibrational properties of 2D layered MoSe$_2$ intercalated with atomic manganese at…
We demonstrate the continuous tuning of the electronic structure of atomically thin MoS2 on flexible substrates by applying a uniaxial tensile strain. A redshift at a rate of ~70 meV per percent applied strain for direct gap transitions,…
Since the stacking order sensitively affects various physical properties of layered materials, accurate determination of the stacking order is important for studying the basic properties of these materials as well as for device…
Using the methods of scanning electron (SEM) and atom force microscopy (AFM) as well as photoluminescence (PL) and Raman micro-spectroscopy, we investigated $Zn_{1-x}Co_xO$ films ($x=5$ and $15\%$) grown by molecular beam epitaxy on…
We study the channel width scaling of back-gated MoS2 metal-oxide-semiconductor field-effect transistors (MOSFETs) from 2 {\mu}m down to 60 nm. We reveal that the channel conductance scales linearly with channel width, indicating no evident…
We use the symmetry constrained low energy effective Hamiltonian of iron based superconductors to study the Raman scattering in the normal state of underdoped iron-based superconductors. The incoming and scattered Raman photons couple…
Atomically thin two-dimensional chalcogenides such as MoS2 monolayers are structurally ideal channel materials for the ultimate atomic electronics. However, a heavy thickness dependence of electrical performance is shown in these ultrathin…
Imaging surfaces using low energy neutral atom scattering is a relatively recent development in the field of microscopy. In this work we demonstrate that this technique is sensitive enough to distinguish films as thin as a single monolayer…
We report a c-axis-polarized electronic Raman scattering study of Bi_2Sr_2CaCu_2O_{8+\delta} single crystals. In the normal state, a resonant electronic continuum extends to 1.5 eV and gains significant intensity as the incoming photon…
The recent discovery of non-saturating giant positive magnetoresistance in Td-WTe2 has aroused great interest in this material. We have studied the structural, electronic and vibrational properties of bulk and few-layer Td-WTe2…
We have characterized phase coherence length, spin orbit scattering length, and the Hall factor in n-type MoS2 2D crystals via weak localization measurements and Hall-effect measurements. Weak localization measurements reveal a phase…
Several powerful techniques exist to detect topologically protected surface states of weakly-interacting electronic systems. In contrast, surface modes of strongly interacting systems which do not carry electric charge are much harder to…
We report a comparative Raman spectroscopic study of the quasi-one-dimensional charge-density-wave systems \ab (A = K, Rb). The temperature and polarization dependent experiments reveal charge-coupled vibrational Raman features. The…